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Current Collapse Phenomena Investigation in Automotive-Grade Power GaN Transistors

Author

Listed:
  • Alfio Basile

    (STMicroelectronics, Stradale Primosole 50, 95121 Catania, Italy)

  • Filippo Scrimizzi

    (STMicroelectronics, Stradale Primosole 50, 95121 Catania, Italy)

  • Santi Agatino Rizzo

    (Department of Electrical Electronic and Computer Engineering (DIEEI), University of Catania, 95125 Catania, Italy)

Abstract

This work analyzes the impact of working conditions on the current collapse (CC) phenomenon for an automotive GaN device. For this purpose, some sensing circuits have been compared to find the most suitable for the considered GaN family. Simulations of the testing schematic have been performed, a prototype board has been created, and some measurements have been taken. Finally, the work has investigated the effect on the CC of the input voltage, current level, switching frequency, and duty cycle. The key outcome is that the temperature increment mitigates the CC phenomenon, which implies that the on-state resistance worsening (dynamic/static ratio), which is due to the CC, reduces with increasing temperature. Therefore, the typical increment of the dynamic on-resistance (R DSON ) with increasing temperature is ascribable to the increment of the static one with temperature, while it is not at all an exacerbation of the current collapse phenomenon.

Suggested Citation

  • Alfio Basile & Filippo Scrimizzi & Santi Agatino Rizzo, 2023. "Current Collapse Phenomena Investigation in Automotive-Grade Power GaN Transistors," Energies, MDPI, vol. 17(1), pages 1-24, December.
    • Handle: RePEc:gam:jeners:v:17:y:2023:i:1:p:230-:d:1311523
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