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Structure and Thermoelectric Characterization of p-Type SnTe Nanobulk Material Synthesized by Charge Compensation Chemical Reaction

Author

Listed:
  • Ryosuke Fujiwara

    (Department of Nanobiochemistry, Frontiers of Innovative Research in Science and Technology (FIRST), Konan University, 7-1-20 Minatojimaminamimachi, Chuo-ku, Kobe 650-0047, Japan)

  • Yuta Ikeda

    (Department of Nanobiochemistry, Frontiers of Innovative Research in Science and Technology (FIRST), Konan University, 7-1-20 Minatojimaminamimachi, Chuo-ku, Kobe 650-0047, Japan)

  • Takuto Kawaguchi

    (Department of Nanobiochemistry, Frontiers of Innovative Research in Science and Technology (FIRST), Konan University, 7-1-20 Minatojimaminamimachi, Chuo-ku, Kobe 650-0047, Japan)

  • Yohei Takashima

    (Department of Nanobiochemistry, Frontiers of Innovative Research in Science and Technology (FIRST), Konan University, 7-1-20 Minatojimaminamimachi, Chuo-ku, Kobe 650-0047, Japan)

  • Takaaki Tsuruoka

    (Department of Nanobiochemistry, Frontiers of Innovative Research in Science and Technology (FIRST), Konan University, 7-1-20 Minatojimaminamimachi, Chuo-ku, Kobe 650-0047, Japan)

  • Kensuke Akamatsu

    (Department of Nanobiochemistry, Frontiers of Innovative Research in Science and Technology (FIRST), Konan University, 7-1-20 Minatojimaminamimachi, Chuo-ku, Kobe 650-0047, Japan)

Abstract

SnTe is the most widely studied p-type thermoelectric (TE) alternative to PbTe. In this study, we prepared a nanostructured SnTe bulk material via spark plasma sintering from a precursor synthesized by a chemical precipitation process without using organic molecules. The sintered sample comprised tiny grains (100–300 nm) with high-density grain boundaries. Eventually, because the material would contain no impurities acting as scattering nodes of charge carriers, the material exhibited a relatively high electrical conductivity of 7.07 × 10 5 Sm −1 at 310 K. The material demonstrated low lattice thermal conductivity (0.87 Wm −1 K −1 at 764 K), which can be owing to the increasing phonon scattering at grain boundaries. The maximum ZT was 0.31 at 764 K in the measured temperature range. This study provides a method for the design of phase-pure and surfactant-free SnTe thermoelectric materials that exhibit low lattice thermal conductivity and high carrier mobility using a chemical synthetic approach.

Suggested Citation

  • Ryosuke Fujiwara & Yuta Ikeda & Takuto Kawaguchi & Yohei Takashima & Takaaki Tsuruoka & Kensuke Akamatsu, 2023. "Structure and Thermoelectric Characterization of p-Type SnTe Nanobulk Material Synthesized by Charge Compensation Chemical Reaction," Energies, MDPI, vol. 17(1), pages 1-12, December.
    • Handle: RePEc:gam:jeners:v:17:y:2023:i:1:p:190-:d:1309903
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