Determination of Shielding Effectiveness of a Subnanosecond High-Power EM Interference by an Enclosure with Aperture Using Time Domain Approach

The most likely intentional high-power electromagnetic (EM) interference, threatening the operation of technologically advanced electronic infrastructure, will have the forms of sub- and nanosecond ultra-wideband (UWB) pulses, several hundred nanosecond pulses of attenuated sinusoids, and sub- and microsecond sinusoidal pulses. The protection of electronic objects against high-power EM pulses is provided by different types of metal enclosure shields with technological apertures, inside which sensitive electronic objects can be placed. These technological apertures allow external EM interference to penetrate into the enclosure, making the EM shielding imperfect. The EM protection against the EM pulses has been mainly assessed based on the so-called shielding effectiveness (SE) parameters. The SE parameters (SE e and SE m for the electric and magnetic fields, respectively) are useful for designing and comparing EM shields. In relatively small shielding enclosures, which have recently become the subject of interest, the SE parameters have been studied for relatively long transient EM interference, longer than 150 ns, i.e., for the EM pulses whose duration is much longer than the time that the pulse takes to pass the small enclosure. In this work, we dealt with an ultrashort transient interference pulse, the duration of which was much shorter than the pulse transit time through the enclosure. The intentional high-power EM subnanosecond UWB pulse is an example of such a pulse. For such an ultrashort pulse, we studied the EM shielding performance of a small size enclosure numerically (W:H:D = 455 mm:50 mm:463 mm) with aperture (W:H = 80 mm:30 mm). The ultrashort EM interference pulse of a Gaussian distribution of the electric and magnetic fields with amplitudes of 10 6 V/m and 2.68·10 3 A/m, respectively, applied in this study, had a duration of 0.0804 ns (FWHM). This means that the high-power EM interference pulse was about 18 times shorter than the time that it takes to pass the enclosure (equal to about 1.5 ns). Our numerical simulations of the subnanosecond high-power EM interference of the interior of the enclosure with aperture were performed in the time domain using the commercial code CST Microwave Studio. First of all, the time-domain simulations resulted in 2D and 3D images and 2D vector maps of the electric and magnetic fields, which visualized the temporal and spatial development of the EM field in the enclosure with aperture caused by the incident subnanosecond high-power EM interference. The development of the associated electric and magnetic fields proceeded in two phases: first in the form of EM waves and later as an interference pattern, traveling forth and back between the front and rear enclosure walls. Due to the energy loss through the aperture, suffered by the traveling EM field and the tendency of the EM field to be evenly distributed over time throughout the entire enclosure, the amplitudes of the EM field decreased about 30 times within 90 ns. Despite the energy loss, the EM field developed in the enclosure existed at least 1000 times longer than the subnanosecond duration of the incident EM pulse (i.e., at least 90 ns as demonstrated by the numerical calculation). Apart from the EM field development visualization, the time-domain simulation enabled easy tracking of the temporal behavior of the EM field in selected points in the enclosure. Such tracking showed that each point in the enclosure was passed by a series of subnanosecond EM pulses, called internal EM pulses, over a relatively long time (at least over the simulation duration of 90 ns). This means that over 90 ns, the points in the enclosure were repeatedly influenced by the series of about 500 subnanosecond internal EM pulses. The amplitudes of many of these pulses were only (3–5) times lower than that of the incident EM pulse. Despite the lower amplitudes, these internal pulses may cause severe EM interference inside the enclosure. This shows a substantial change in the nature of the EM interference caused by a subnanosecond high-power EM plane wave when a given point is not shielded (a single interference of the subnanosecond strong EM pulse) and when a given point is shielded by the enclosure with aperture (a repetitive interference of subnanosecond weaker EM pulses). With the time dependence of the EM field amplitudes obtained from the time-domain calculation at a selected point in the enclosure, it is easy to determine the SE e and SE m at that point as a function of time. In this way, evaluation of the local SE e and SE m (for selected points in the enclosure) can be performed. Moreover, the 2D and 3D images and 2D vector maps calculated in the time domain for a given time enabled easy calculation of the SE e and SE m maps for various times. Such maps, shown for the first time in this paper, give a more global view of the shielding properties of the enclosure with an aperture. This all shows the advantages of the use of the time-domain approach for studying EM shielding in the case of ultrashort EM interferences.