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Deep Level Transient Fourier Spectroscopy Investigation of Electron Traps on AlGaN/GaN-on-Si Power Diodes

Author

Listed:
  • Florian Rigaud-Minet

    (Univ Lyon, INSA Lyon, Université Claude Bernard Lyon 1, Ecole Centrale de Lyon, CNRS, Ampère, UMR5005, F-69621 Villeurbanne, France
    Univ. Grenoble Alpes, CEA, Leti, F-38000 Grenoble, France)

  • Christophe Raynaud

    (Univ Lyon, INSA Lyon, Université Claude Bernard Lyon 1, Ecole Centrale de Lyon, CNRS, Ampère, UMR5005, F-69621 Villeurbanne, France)

  • Julien Buckley

    (Univ. Grenoble Alpes, CEA, Leti, F-38000 Grenoble, France)

  • Matthew Charles

    (Univ. Grenoble Alpes, CEA, Leti, F-38000 Grenoble, France)

  • Patricia Pimenta-Barros

    (Univ. Grenoble Alpes, CEA, Leti, F-38000 Grenoble, France)

  • Romain Gwoziecki

    (Univ. Grenoble Alpes, CEA, Leti, F-38000 Grenoble, France)

  • Charlotte Gillot

    (Univ. Grenoble Alpes, CEA, Leti, F-38000 Grenoble, France)

  • Véronique Sousa

    (Univ. Grenoble Alpes, CEA, Leti, F-38000 Grenoble, France)

  • Hervé Morel

    (Univ Lyon, INSA Lyon, Université Claude Bernard Lyon 1, Ecole Centrale de Lyon, CNRS, Ampère, UMR5005, F-69621 Villeurbanne, France)

  • Dominique Planson

    (Univ Lyon, INSA Lyon, Université Claude Bernard Lyon 1, Ecole Centrale de Lyon, CNRS, Ampère, UMR5005, F-69621 Villeurbanne, France)

Abstract

Many kinds of defects are present in AlGaN/GaN-on-Si based power electronics devices. Their identification is the first step to understand and improve device performance. Electron traps are investigated in AlGaN/GaN-on-Si power diodes using deep level transient Fourier spectroscopy (DLTFS) at different bias conditions for two Schottky contact’s etching recipes. This study reveals seven different traps corresponding to point defects. Their energy level E T ranged from 0.4 eV to 0.57 eV below the conduction band. Among them, two new traps are reported and are etching-related: D3 ( E T = 0.47–0.48 eV; σ ≈ 10 −15 cm 2 ) and D7 ( E T = 0.57 eV; σ = 4.45 × 10 −12 cm 2 ). The possible origin of the other traps are discussed with respect to the GaN literature. They are proposed to be related to carbon and nitrogen vacancies or to carbon, such as C N -C Ga . Some others are likely due to crystal surface recombination, native defects or a related complex, or to the nitrogen antisite: N Ga .

Suggested Citation

  • Florian Rigaud-Minet & Christophe Raynaud & Julien Buckley & Matthew Charles & Patricia Pimenta-Barros & Romain Gwoziecki & Charlotte Gillot & Véronique Sousa & Hervé Morel & Dominique Planson, 2023. "Deep Level Transient Fourier Spectroscopy Investigation of Electron Traps on AlGaN/GaN-on-Si Power Diodes," Energies, MDPI, vol. 16(2), pages 1-12, January.
    • Handle: RePEc:gam:jeners:v:16:y:2023:i:2:p:599-:d:1024924
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