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Higher Electrical Conductivity of Functionalized Graphene Oxide Doped with Silver and Copper (II) Ions

Author

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  • Nelson Gustavo Alves Pereira

    (Instituto de Física e Química, Universidade Federal de Itajubá, Av BPS, 1303, Pinheirinho, Itajubá 37500-903, Brazil
    These authors contributed equally to this work.)

  • Maria Elena Leyva Gonzaléz

    (Instituto de Física e Química, Universidade Federal de Itajubá, Av BPS, 1303, Pinheirinho, Itajubá 37500-903, Brazil
    These authors contributed equally to this work.)

  • Alvaro Antonio Alencar de Queiroz

    (Instituto de Pesquisas Energéticas e Nucleares (IPEN), University of São Paulo, Cidade Universitária Armando de Salles Oliveira, São Paulo 05508-000, Brazil
    These authors contributed equally to this work.)

  • Adhimar Flávio Oliveira

    (Instituto de Física e Química, Universidade Federal de Itajubá, Av BPS, 1303, Pinheirinho, Itajubá 37500-903, Brazil
    These authors contributed equally to this work.)

  • Estácio Tavares Wanderley Neto

    (Instituto de Sistemas Elétricos e Energia, Universidade Federal de Itajubá, Av BPS, 1303, Pinheirinho, Itajubá 37500-903, Brazil)

Abstract

This study presents a new methodology for graphene oxide (GO) synthesis through electrochemical exfoliation of graphite, followed by phthalic anhydride functionalization (PhA-GO) and doping with Cu 2 + and Ag + ions. The synthesis of GO involved the use of an electrochemical cell with H 2 SO 4 as the electrolyte, with a gradual increase in potential from 2.3 V to 10 V. Extensive characterization techniques confirmed the successful incorporation of oxygen-containing functional groups, verifying the oxidation of graphite. PhA-GO functionalization was confirmed by thermogravimetric analysis, Differential Scanning Calorimetry, Fourier-transform infrared spectroscopy (FTIR), UV-Vis spectroscopy, X-ray diffraction, scanning electron microscopy (SEM), and energy-dispersive spectroscopy (EDX), which confirmed the presence of Cu 2 + and Ag + ions. The Scherrer equation determined a grain size of 75.85 nm for GO. The electrical properties exhibited semiconductor and semimetal behavior, particularly in PhA-GO/Ag + composites, making them suitable for electronic devices over a wide temperature range, presenting a promising pathway for advanced materials in electronic applications.

Suggested Citation

  • Nelson Gustavo Alves Pereira & Maria Elena Leyva Gonzaléz & Alvaro Antonio Alencar de Queiroz & Adhimar Flávio Oliveira & Estácio Tavares Wanderley Neto, 2023. "Higher Electrical Conductivity of Functionalized Graphene Oxide Doped with Silver and Copper (II) Ions," Energies, MDPI, vol. 16(20), pages 1-16, October.
    • Handle: RePEc:gam:jeners:v:16:y:2023:i:20:p:7019-:d:1256678
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