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Impact of Bypass Diode Fault Resistance Values on Burnout in Bypass Diode Failures in Simulated Photovoltaic Modules with Various Output Parameters

Author

Listed:
  • Toshiyuki Hamada

    (Faculty of Engineering, Osaka Electro-Communication University, 18-8 Hatsucho, Osaka 575-0063, Japan)

  • Tomoki Azuma

    (Graduate School of Engineering, Osaka Electro-Communication University, 18-8 Hatsucho, Osaka 575-0063, Japan)

  • Ikuo Nanno

    (National Institute of Technology, Ube College, 2-14-1 Tokiwadai, Yamaguchi 755-009, Japan)

  • Norio Ishikura

    (National Institute of Technology, Yonago College, 4448 Hikonacho, Tottori 683-0854, Japan)

  • Masayuki Fujii

    (National Institute of Technology, Oshima College, 1091-1 Komatsu, Yamaguchi 742-2106, Japan)

  • Shinichiro Oke

    (National Institute of Technology, Tsuyama College, 624-1, Numa, Okayama 708-0824, Japan)

Abstract

The bypass diode (BPD), a protective element in a photovoltaic system (PVS), occasionally fails as a result of lightning damage. In this study, using various resistance values, we investigated the burnout risk of PV modules experiencing BPD failures through experiments that replicated conditions in which a BPD fails. Specifically, we evaluated the electric power generated by the failed BPD as we varied the faulty resistance value. Furthermore, we examined the impact of the failure resistance value of the BPD on PV module burnout. The results indicated that the power consumption of a BPD is particularly high, ranging from approximately 2 to 10 Ω when the PV module operates at its maximum power point. In addition, when the load is disconnected, the risk of heat generation is significantly higher, at BPD fault resistance values of approximately 0.1–10 Ω. Moreover, a faulty BPD with a resistance of approximately 0.1–10 Ω poses a high risk of burnout, particularly during load disconnection, owing to the increased heat generated by a BPD failure.

Suggested Citation

  • Toshiyuki Hamada & Tomoki Azuma & Ikuo Nanno & Norio Ishikura & Masayuki Fujii & Shinichiro Oke, 2023. "Impact of Bypass Diode Fault Resistance Values on Burnout in Bypass Diode Failures in Simulated Photovoltaic Modules with Various Output Parameters," Energies, MDPI, vol. 16(16), pages 1-9, August.
    • Handle: RePEc:gam:jeners:v:16:y:2023:i:16:p:5879-:d:1213103
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