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Electrical Transport Characteristics of Vertical GaN Schottky-Barrier Diode in Reverse Bias and Its Numerical Simulation

Author

Listed:
  • Vishwajeet Maurya

    (CEA, Leti, University Grenoble Alpes, 38000 Grenoble, France
    GREMAN UMR 7347, Université de Tours, CNRS, INSA Centre Val de Loire, 37071 Tours, France)

  • Julien Buckley

    (CEA, Leti, University Grenoble Alpes, 38000 Grenoble, France)

  • Daniel Alquier

    (GREMAN UMR 7347, Université de Tours, CNRS, INSA Centre Val de Loire, 37071 Tours, France)

  • Mohamed-Reda Irekti

    (CEA, Leti, University Grenoble Alpes, 38000 Grenoble, France)

  • Helge Haas

    (CEA, Leti, University Grenoble Alpes, 38000 Grenoble, France)

  • Matthew Charles

    (CEA, Leti, University Grenoble Alpes, 38000 Grenoble, France)

  • Marie-Anne Jaud

    (CEA, Leti, University Grenoble Alpes, 38000 Grenoble, France)

  • Veronique Sousa

    (CEA, Leti, University Grenoble Alpes, 38000 Grenoble, France)

Abstract

We investigated the temperature-dependent reverse characteristics ( J R -V R -T ) of vertical GaN Schottky-barrier diodes with and without a fluorine-implanted edge termination (ET). To understand the device leakage mechanism, temperature-dependent characterizations were performed, and the observed reverse current was modeled through technology computer-aided design. Different levels of current were observed in both forward and reverse biases for the ET and non-ET devices, which suggested a change in the conduction mechanism for the observed leakages. The measured J R -V R -T characteristics of the non-edge-terminated device were successfully fitted in the entire temperature range with the phonon-assisted tunneling model, whereas for the edge-terminated device, the reverse characteristics were modeled by taking into account the emission of trapped electrons at a high temperature and field caused by Poole–Frenkel emission.

Suggested Citation

  • Vishwajeet Maurya & Julien Buckley & Daniel Alquier & Mohamed-Reda Irekti & Helge Haas & Matthew Charles & Marie-Anne Jaud & Veronique Sousa, 2023. "Electrical Transport Characteristics of Vertical GaN Schottky-Barrier Diode in Reverse Bias and Its Numerical Simulation," Energies, MDPI, vol. 16(14), pages 1-10, July.
    • Handle: RePEc:gam:jeners:v:16:y:2023:i:14:p:5447-:d:1196560
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