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LambertW Function to Extract Physical Parameters of a Schottky Barrier Diode from Its I–V Characteristics

Author

Listed:
  • Safae Aazou

    (Faculty of Sciences, Mohammed V University in Rabat, B.P. 1014 RP Rabat, Morocco
    Moroccan Foundation for Advanced Science Innovation and Research (MAScIR)-UM6P, B.P. 10100 Rabat, Morocco)

  • Matthew Schuette White

    (Department of Physics, University of Vermont, Burlington, VT 05405, USA)

  • Martin Kaltenbrunner

    (Soft Matter Physics, Institute of Experimental Physics, Johannes Kepler University, A-4040 Linz, Austria
    LIT Soft Materials Lab, Johannes Kepler University, A-4040 Linz, Austria)

  • Zouheir Sekkat

    (Faculty of Sciences, Mohammed V University in Rabat, B.P. 1014 RP Rabat, Morocco
    Moroccan Foundation for Advanced Science Innovation and Research (MAScIR)-UM6P, B.P. 10100 Rabat, Morocco)

  • Daniel Ayuk Mbi Egbe

    (Energieinstitut an der Johannes Kepler Universität, Altenbergerstraße 69, 4040 Linz, Austria
    College of Science and Technology, University of Rwanda, KN 7 Ave, Kigali P.O. Box 3900, Rwanda)

  • El Mahdi Assaid

    (Faculty of Sciences, University Chouaïb Doukkali, B.P. 24000 El Jadida, Morocco)

Abstract

In the current work, the exact analytical expression of the current–voltage characteristics, which are given in terms of the L a m b e r t W function, is used to extract the physical parameters of organic and inorganic Schottky barrier diodes (SBDs). The extraction is achieved by a variety of methods using the experimental I–V characteristics. The organic SBD is based on a Poly (3-hexylthiophene-2,5-diyle) conjugated polymer (P3HT) with Al contact, measured at 300 K. Regarding the inorganic SBDs, one is based on Iridium–Silicon Carbide (Ir–SiC), measured at 300 K, and the second diode is based on Gold–Gallium Arsenide (Au–GaAs), measured at 200 K. The numerical characteristics based on the physical parameters extracted by the presented methods are in good agreement with the experimental data. The determination coefficient of the modeling methods for the three SBDs is higher than 99.99%.

Suggested Citation

  • Safae Aazou & Matthew Schuette White & Martin Kaltenbrunner & Zouheir Sekkat & Daniel Ayuk Mbi Egbe & El Mahdi Assaid, 2022. "LambertW Function to Extract Physical Parameters of a Schottky Barrier Diode from Its I–V Characteristics," Energies, MDPI, vol. 15(5), pages 1-11, February.
    • Handle: RePEc:gam:jeners:v:15:y:2022:i:5:p:1667-:d:756902
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