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Dynamic-State Analysis of Inverter Based on Cascode GaN HEMTs for PV Application

Author

Listed:
  • Yajing Zhang

    (School of Automation, Beijing Information Science and Technology University, Beijing 100192, China)

  • Jianguo Li

    (School of Automation, Beijing Information Science and Technology University, Beijing 100192, China)

  • Jiuhe Wang

    (School of Automation, Beijing Information Science and Technology University, Beijing 100192, China)

  • Trillion Q. Zheng

    (School of Electrical Engineering, Beijing Jiaotong University, Beijing 100044, China)

  • Pengyu Jia

    (School of Electrical Engineering, North China University of Technology, Beijing 100144, China)

Abstract

With the increase in renewable energy generation, microgrid has put forward higher requirements on the power density and performance of the photovoltaic inverter. In this paper, the dynamic process of inverter based on the cascode Gallium nitride (GaN) high electron mobility transistor (HEMT) for the photovoltaic (PV) application is analyzed in detail. The parasitic inductors and capacitors have been considered in our proposed equivalent model, which can explain the phenomenon that the crossover time of the voltage and current is prolonged by the parasitic parameters. The influence of the parasitic parameters is identified through theoretical analysis. By analyzing the influence of parasitic parameters, the design process of high-frequency inverter can be optimized. A 500 W inverter based on the cascode GaN HEMT is built, and the correctness of theoretical and simulation analysis is verified by the experimental results.

Suggested Citation

  • Yajing Zhang & Jianguo Li & Jiuhe Wang & Trillion Q. Zheng & Pengyu Jia, 2022. "Dynamic-State Analysis of Inverter Based on Cascode GaN HEMTs for PV Application," Energies, MDPI, vol. 15(20), pages 1-12, October.
    • Handle: RePEc:gam:jeners:v:15:y:2022:i:20:p:7791-:d:949053
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    References listed on IDEAS

    as
    1. Loizos Efthymiou & Gianluca Camuso & Giorgia Longobardi & Terry Chien & Max Chen & Florin Udrea, 2017. "On the Source of Oscillatory Behaviour during Switching of Power Enhancement Mode GaN HEMTs," Energies, MDPI, vol. 10(3), pages 1-11, March.
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    Keywords

    PV; GaN HEMT; cascode; inverter; microgrid;
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