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Synthesis of Ultra-Thin Two-Dimensional SiC Using the CVD Method

Author

Listed:
  • Xu Yang

    (Institute of Nuclear and New Energy Technology, Tsinghua University, Beijing 100190, China)

  • Rongzheng Liu

    (Institute of Nuclear and New Energy Technology, Tsinghua University, Beijing 100190, China)

  • Bing Liu

    (Institute of Nuclear and New Energy Technology, Tsinghua University, Beijing 100190, China)

  • Malin Liu

    (Institute of Nuclear and New Energy Technology, Tsinghua University, Beijing 100190, China)

Abstract

Two-dimensional materials have shown great potential for applications in many research areas because of their unique structures, and many 2D materials have been investigated since graphene was discovered. Ultra-thin SiC layers with thicknesses of 8–10 nm and multi-layer SiC films were designed and fabricated in this study. First, the multi-layer SiC films were obtained by the chemical vapor deposition (CVD) method with the addition of boron elements. We found that boron additives showed novel effects in the CVD process. Boron can promote the formation and crystallization of SiC films at low temperatures (1100 °C), resulting in the separation of SiC films into multi-layers with thicknesses of several nanometers. In addition, a formation mechanism for the 2D SiC layers is proposed. The boron mostly aggregated spontaneously between the thin SiC layers. Photoluminescence spectroscopy results showed that the SiC films with multi-layer structures had different bandgaps to normal SiC films. The present work proposes a potential method for fabricating 2D SiC materials with convenient experimental parameters and shows the potential of 2D SiC materials for use in electronics.

Suggested Citation

  • Xu Yang & Rongzheng Liu & Bing Liu & Malin Liu, 2022. "Synthesis of Ultra-Thin Two-Dimensional SiC Using the CVD Method," Energies, MDPI, vol. 15(17), pages 1-8, August.
    • Handle: RePEc:gam:jeners:v:15:y:2022:i:17:p:6351-:d:902758
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