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Experimental Determination, Modeling, and Simulation of Nonlinear Thermal Effects in Bipolar Transistors under Static Conditions: A Critical Review and Update

Author

Listed:
  • Vincenzo d’Alessandro

    (Department of Electrical Engineering and Information Technology, University Federico II, 80125 Naples, Italy)

  • Antonio Pio Catalano

    (Department of Electrical Engineering and Information Technology, University Federico II, 80125 Naples, Italy)

  • Ciro Scognamillo

    (Department of Electrical Engineering and Information Technology, University Federico II, 80125 Naples, Italy)

  • Markus Müller

    (Chair for Electron Devices and Integrated Circuits, Technical University Dresden, 01069 Dresden, Germany)

  • Michael Schröter

    (Chair for Electron Devices and Integrated Circuits, Technical University Dresden, 01069 Dresden, Germany)

  • Peter J. Zampardi

    (Qorvo, Inc., Newbury Park, CA 91320, USA)

  • Lorenzo Codecasa

    (Department of Electronics, Information, and Bioengineering, Politecnico di Milano, 20133 Milan, Italy)

Abstract

This paper presents a comprehensive overview of nonlinear thermal effects in bipolar transistors under static conditions. The influence of these effects on the thermal resistance is theoretically explained and analytically modeled using the single-semiconductor assumption. A detailed review of experimental techniques to extract the thermal resistance as a function of backside temperature and/or dissipated power from DC measurements is provided; advantages, underlying approximations, and limitations of all methods are clarified, and guidelines for their correct application are given. Accurate FEM thermal simulations of an InGaP/GaAs and a Si/SiGe HBT are performed to verify the accuracy of the single-semiconductor theory. The thermal resistance formulations employed in the most popular compact bipolar transistor models for circuit simulators are investigated, and it is found that they do not properly describe nonlinear thermal effects. Alternative implementations of the more accurate single-semiconductor theory are then proposed for the future versions of the compact models.

Suggested Citation

  • Vincenzo d’Alessandro & Antonio Pio Catalano & Ciro Scognamillo & Markus Müller & Michael Schröter & Peter J. Zampardi & Lorenzo Codecasa, 2022. "Experimental Determination, Modeling, and Simulation of Nonlinear Thermal Effects in Bipolar Transistors under Static Conditions: A Critical Review and Update," Energies, MDPI, vol. 15(15), pages 1-27, July.
    • Handle: RePEc:gam:jeners:v:15:y:2022:i:15:p:5457-:d:873715
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