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Gate Current in p-GaN Gate HEMTs as a Channel Temperature Sensitive Parameter: A Comparative Study between Schottky- and Ohmic-Gate GaN HEMTs

Author

Listed:
  • Alessandro Borghese

    (Department of Electrical Engineering and Information Technologies, University of Naples Federico II, 80125 Naples, Italy)

  • Alessandro Di Costanzo

    (Department of Electrical Engineering and Information Technologies, University of Naples Federico II, 80125 Naples, Italy)

  • Michele Riccio

    (Department of Electrical Engineering and Information Technologies, University of Naples Federico II, 80125 Naples, Italy)

  • Luca Maresca

    (Department of Electrical Engineering and Information Technologies, University of Naples Federico II, 80125 Naples, Italy)

  • Giovanni Breglio

    (Department of Electrical Engineering and Information Technologies, University of Naples Federico II, 80125 Naples, Italy)

  • Andrea Irace

    (Department of Electrical Engineering and Information Technologies, University of Naples Federico II, 80125 Naples, Italy)

Abstract

In this work, a comparison between the gate-driving requirements of p-GaN HEMTs with gate contact of Schottky and Ohmic type is presented. Furthermore, the presence of a gate current of different magnitude is experimentally verified for both types of devices. Successively, the possibility of using the gate current as a temperature-sensitive parameter and its monitoring during real circuit operation is proposed. The viability of monitoring the gate current without introducing additional complexity in the gate driver is examined through experimental measurements on commercially available p-GaN HEMTs.

Suggested Citation

  • Alessandro Borghese & Alessandro Di Costanzo & Michele Riccio & Luca Maresca & Giovanni Breglio & Andrea Irace, 2021. "Gate Current in p-GaN Gate HEMTs as a Channel Temperature Sensitive Parameter: A Comparative Study between Schottky- and Ohmic-Gate GaN HEMTs," Energies, MDPI, vol. 14(23), pages 1-12, December.
    • Handle: RePEc:gam:jeners:v:14:y:2021:i:23:p:8055-:d:693192
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    Cited by:

    1. Adrian Valeriu Pirosca & Marcello Vecchio & Santi Agatino Rizzo & Francesco Iannuzzo, 2023. "Evaluation of the Thermal Resistance in GaN HEMTs Using Thermo-Sensitive Electrical Parameters," Energies, MDPI, vol. 16(6), pages 1-17, March.

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