IDEAS home Printed from https://ideas.repec.org/a/gam/jeners/v14y2021i21p6896-d661282.html
   My bibliography  Save this article

Formation of Graphite-Copper/N-Silicon Schottky Photovoltaic Diodes Using Different Plasma Technologies

Author

Listed:
  • Žydrūnas Kavaliauskas

    (Plasma Processing Laboratory, Lithuanian Energy Institute, Breslaujos Str. 3, LT-44403 Kaunas, Lithuania
    Department of Industrial Engineering and Robotics, Kaunas University of Applied Sciences, Pramones Ave. 20, LT-50468 Kaunas, Lithuania)

  • Vilius Dovydaitis

    (Department of Physics, Kaunas University of Technology, Studentų Str. 50, LT-44249 Kaunas, Lithuania)

  • Romualdas Kėželis

    (Plasma Processing Laboratory, Lithuanian Energy Institute, Breslaujos Str. 3, LT-44403 Kaunas, Lithuania)

  • Liutauras Marcinauskas

    (Plasma Processing Laboratory, Lithuanian Energy Institute, Breslaujos Str. 3, LT-44403 Kaunas, Lithuania
    Department of Physics, Kaunas University of Technology, Studentų Str. 50, LT-44249 Kaunas, Lithuania)

  • Vitas Valinčius

    (Plasma Processing Laboratory, Lithuanian Energy Institute, Breslaujos Str. 3, LT-44403 Kaunas, Lithuania)

  • Arūnas Baltušnikas

    (Laboratory of Materials Research and Testing, Lithuanian Energy Institute, Breslaujos Str. 3, LT-44403 Kaunas, Lithuania)

  • Aleksandras Iljinas

    (Department of Physics, Kaunas University of Technology, Studentų Str. 50, LT-44249 Kaunas, Lithuania)

  • Giedrius Gecevičius

    (Department of Industrial Engineering and Robotics, Kaunas University of Applied Sciences, Pramones Ave. 20, LT-50468 Kaunas, Lithuania)

  • Vytautas Čapas

    (Department of Industrial Engineering and Robotics, Kaunas University of Applied Sciences, Pramones Ave. 20, LT-50468 Kaunas, Lithuania)

Abstract

Plasma spraying and magnetron sputtering were used to form graphite–copper films on an n-type silicon surface. The main objective of this work was to compare the properties of the obtained graphite–copper Schottky photodiodes prepared using two different layer formation methods and to evaluate the influence of copper content on the surface morphology, phase structure, and photovoltaic characteristics of the graphite–copper films. Surface morphology analysis shows that the surface of the formed layers using either plasma spraying technology or the magnetron sputtering method consists of various sphere-shaped microstructures. The X-ray diffraction measurements demonstrated that the graphite–copper coatings formed by plasma spraying were crystalline phase. Meanwhile, the films deposited by magnetron sputtering were amorphous when the copper concentration was up to 9.7 at.%. The increase in copper content in the films led to the formation of Cu crystalline phase. Schottky diodes formed using magnetron sputtering technology had a maximum current density of 220 mA/cm 2 at 5 V. Meanwhile, the maximum electric current density of Schottky photodiodes formed using plasma spraying reached 3.8 mA/cm 2 . It was demonstrated that the efficiency of Schottky diodes formed using magnetron sputtering was up to 60 times higher than Schottky diodes formed using plasma spraying.

Suggested Citation

  • Žydrūnas Kavaliauskas & Vilius Dovydaitis & Romualdas Kėželis & Liutauras Marcinauskas & Vitas Valinčius & Arūnas Baltušnikas & Aleksandras Iljinas & Giedrius Gecevičius & Vytautas Čapas, 2021. "Formation of Graphite-Copper/N-Silicon Schottky Photovoltaic Diodes Using Different Plasma Technologies," Energies, MDPI, vol. 14(21), pages 1-14, October.
    • Handle: RePEc:gam:jeners:v:14:y:2021:i:21:p:6896-:d:661282
    as

    Download full text from publisher

    File URL: https://www.mdpi.com/1996-1073/14/21/6896/pdf
    Download Restriction: no
    File URL: https://www.mdpi.com/1996-1073/14/21/6896/
    Download Restriction: no
    ---><---

    Corrections

    All material on this site has been provided by the respective publishers and authors. You can help correct errors and omissions. When requesting a correction, please mention this item's handle: RePEc:gam:jeners:v:14:y:2021:i:21:p:6896-:d:661282. See general information about how to correct material in RePEc.

    If you have authored this item and are not yet registered with RePEc, we encourage you to do it here. This allows to link your profile to this item. It also allows you to accept potential citations to this item that we are uncertain about.

    We have no bibliographic references for this item. You can help adding them by using this form .

    If you know of missing items citing this one, you can help us creating those links by adding the relevant references in the same way as above, for each refering item. If you are a registered author of this item, you may also want to check the "citations" tab in your RePEc Author Service profile, as there may be some citations waiting for confirmation.

    For technical questions regarding this item, or to correct its authors, title, abstract, bibliographic or download information, contact: MDPI Indexing Manager (email available below). General contact details of provider: https://www.mdpi.com .

    Please note that corrections may take a couple of weeks to filter through the various RePEc services.

    IDEAS is a RePEc service. RePEc uses bibliographic data supplied by the respective publishers.