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Application Properties of ZnO and AZO Thin Films Obtained by the ALD Method

Author

Listed:
  • Barbara Swatowska

    (Department of Electronics, Faculty of Computer Science, Electronics and Telecommunications, AGH University of Science and Technology, 30-059 Krakow, Poland)

  • Wiesław Powroźnik

    (Department of Electronics, Faculty of Computer Science, Electronics and Telecommunications, AGH University of Science and Technology, 30-059 Krakow, Poland)

  • Halina Czternastek

    (Institute of Physics, Pedagogical University of Cracow, ul. Podchorążych 2, 30-084 Krakow, Poland)

  • Gabriela Lewińska

    (Department of Electronics, Faculty of Computer Science, Electronics and Telecommunications, AGH University of Science and Technology, 30-059 Krakow, Poland)

  • Tomasz Stapiński

    (Department of Electronics, Faculty of Computer Science, Electronics and Telecommunications, AGH University of Science and Technology, 30-059 Krakow, Poland)

  • Rafał Pietruszka

    (Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland)

  • Bartłomiej S. Witkowski

    (Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland)

  • Marek Godlewski

    (Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland)

Abstract

The thin layers of ZnO and ZnO: Al (Al doped zinc oxide—AZO) were deposited by the atomic deposition layer (ALD) method on silicon and glass substrates. The structures were deposited using diethylzinc (DEZ) and deionized water as zinc and oxygen precursors. A precursor of trimethylaluminum (TMA) was used to introduce the aluminum dopant. The present study of ALD-deposited ZnO and AZO films was motivated by their applications in photovoltaics. We attempted to expose several properties of such films. Structural, optical (including ellipsometric measurements) and electrical investigations were performed. We discussed the relations between samples doped with different Al fractions and their properties.

Suggested Citation

  • Barbara Swatowska & Wiesław Powroźnik & Halina Czternastek & Gabriela Lewińska & Tomasz Stapiński & Rafał Pietruszka & Bartłomiej S. Witkowski & Marek Godlewski, 2021. "Application Properties of ZnO and AZO Thin Films Obtained by the ALD Method," Energies, MDPI, vol. 14(19), pages 1-17, October.
    • Handle: RePEc:gam:jeners:v:14:y:2021:i:19:p:6271-:d:648626
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