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Characterization of m-GaN and a-GaN Crystallographic Planes after Being Chemically Etched in TMAH Solution

Author

Listed:
  • Nedal Al Taradeh

    (Laboratoire Nanotechnologies Nanosystèmes, CNRS UMI-3463, 3IT, Université de Sherbrooke, Sherbrooke, QC J1K OA5, Canada)

  • Eric Frayssinet

    (University Côte d’Azur, CNRS (Centre National de la Recherche Scientifique), CRHEA (Centre de Re-cherche sur l’Hétéro-Epitaxie et ses Applications), rue Bernard Grégory, 06560 Valbonne, France)

  • Christophe Rodriguez

    (Laboratoire Nanotechnologies Nanosystèmes, CNRS UMI-3463, 3IT, Université de Sherbrooke, Sherbrooke, QC J1K OA5, Canada)

  • Frederic Morancho

    (Laboratoire d’Analyse et d’Architecture des Systèmes (LAAS-CNRS), Université de Toulouse, CNRS, Av du Colonel Roche, BP 54200, 31031 Toulouse, France)

  • Camille Sonneville

    (INSA Lyon, Université Claude Bernard Lyon 1, Ecole Centrale de Lyon, CNRS, Ampère, UMR5005, 69621 Villeurbanne, France)

  • Luong-Viet Phung

    (INSA Lyon, Université Claude Bernard Lyon 1, Ecole Centrale de Lyon, CNRS, Ampère, UMR5005, 69621 Villeurbanne, France)

  • Ali Soltani

    (Laboratoire Nanotechnologies Nanosystèmes, CNRS UMI-3463, 3IT, Université de Sherbrooke, Sherbrooke, QC J1K OA5, Canada)

  • Florian Tendille

    (Saint-Gobain, 12 Place de l’Iris, 92400 Courbevoie, France)

  • Yvon Cordier

    (University Côte d’Azur, CNRS (Centre National de la Recherche Scientifique), CRHEA (Centre de Re-cherche sur l’Hétéro-Epitaxie et ses Applications), rue Bernard Grégory, 06560 Valbonne, France)

  • Hassan Maher

    (Laboratoire Nanotechnologies Nanosystèmes, CNRS UMI-3463, 3IT, Université de Sherbrooke, Sherbrooke, QC J1K OA5, Canada)

Abstract

This paper proposes a new technique to engineer the Fin channel in vertical GaN FinFET toward a straight and smooth channel sidewall. Consequently, the GaN wet etching in the TMAH solution is detailed; we found that the m-GaN plane has lower surface roughness than crystallographic planes with other orientations, including the a-GaN plane. The grooves and slope (Cuboids) at the channel base are also investigated. The agitation does not assist in Cuboid removal or crystallographic planes etching rate enhancement. Finally, the impact of UV light on m and a-GaN crystal plane etching rates in TMAH has been studied with and without UV light. Accordingly, it is found that the m-GaN plane etching rate is enhanced from 0.69 to 1.09 nm/min with UV light; in the case of a-GaN plane etching, UV light enhances the etching rate from 2.94 to 4.69 nm/min.

Suggested Citation

  • Nedal Al Taradeh & Eric Frayssinet & Christophe Rodriguez & Frederic Morancho & Camille Sonneville & Luong-Viet Phung & Ali Soltani & Florian Tendille & Yvon Cordier & Hassan Maher, 2021. "Characterization of m-GaN and a-GaN Crystallographic Planes after Being Chemically Etched in TMAH Solution," Energies, MDPI, vol. 14(14), pages 1-10, July.
    • Handle: RePEc:gam:jeners:v:14:y:2021:i:14:p:4241-:d:593994
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