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A New SiC Planar-Gate IGBT for Injection Enhancement Effect and Low Oxide Field

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  • Meng Zhang

    (Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China)

  • Baikui Li

    (Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China)

  • Zheyang Zheng

    (Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong)

  • Xi Tang

    (Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China)

  • Jin Wei

    (Institute of Microelectronics, Peking University, Beijing 100871, China)

Abstract

A new silicon carbide (SiC) planar-gate insulated-gate bipolar transistor (IGBT) is proposed and comprehensively investigated in this paper. Compared to the traditional SiC planar-gate IGBT, the new IGBT boasts a much stronger injection enhancement effect, which leads to a low on-state voltage ( V ON ) approaching the SiC trench-gate IGBT. The strong injection enhancement effect is obtained by a heavily doped carrier storage layer (CSL), which creates a hole barrier under the p-body to hinder minority carriers from being extracted away through the p-body. A p-shield is located at the bottom of the CSL and coupled to the p-body of the IGBT by an embedded p-MOSFET (metal-oxide-semiconductor field effect transistors). In off-state, the heavily doped CSL is shielded by the p-MOSFET clamped p-shield. Thus, a high breakdown voltage is maintained. At the same time, owing to the planar-gate structure, the proposed IGBT does not suffer the high oxide field that threatens the long-term reliability of the trench-gate IGBT. The turn-off characteristics of the new IGBT are also studied, and the turn-off energy loss ( E OFF ) is similar to the conventional planar-gate IGBT. Therefore, the new IGBT achieves the benefits of both the conventional planar-gate IGBT and the trench-gate IGBT, i.e., a superior V ON - E OFF trade-off and a low oxide field.

Suggested Citation

  • Meng Zhang & Baikui Li & Zheyang Zheng & Xi Tang & Jin Wei, 2020. "A New SiC Planar-Gate IGBT for Injection Enhancement Effect and Low Oxide Field," Energies, MDPI, vol. 14(1), pages 1-12, December.
    • Handle: RePEc:gam:jeners:v:14:y:2020:i:1:p:82-:d:468436
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    References listed on IDEAS

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    1. Jheng-Yi Jiang & Tian-Li Wu & Feng Zhao & Chih-Fang Huang, 2020. "Numerical Study of 4H-SiC UMOSFETs with Split-Gate and P+ Shielding," Energies, MDPI, vol. 13(5), pages 1-10, March.
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