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Formation of 7-nm-wide Line&Spaces in Half Pitch by 3 Dimensional Self-assembly of Nano-dots Using Sphere Type PS-PDMS

Author

Listed:
  • Sumio Hosaka

    (Gunma University, Japan)

  • Hui Zhang

    (Gunma University, Japan)

  • You Yin

    (Gunma University, Japan)

  • Hayato Sone

    (Gunma University, Japan)

Abstract

We have formed nanometer-wide lines & spaces by graphoepitaxy of sphere type polystyrene-poly dimethyl siloxane (PS-PDMS), with a molecular weight (MW) of 14.6 kg/mol., along electron-beam (EB)-drawn resist guide lines. We have 3-dimensionally ordered the sphere type PS-PDMS by controlling a thickness of the PS-PDMS along improved guide lines to form the line and space pattern. We obtained the thickness dependence on the pattern change such as nano-dot arrays and nano-line & space patterns. When the thickness increased to about +4 nm from the upper thickness for formation of the dot arrays, the line & space patterns have been formed with about 7 nm in line width and 14 nm in pitch.

Suggested Citation

Handle: RePEc:epw:physic:v:3:y:2021:i:6:id:11141
DOI: 10.24018/ejphysics.2021.3.6.141
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