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Investigation of the Possibility to Use Ge p-i-n Photodiodes in Infrared SPR Sensors

Author

Listed:
  • Artem Fedorenko

    (V. Lashkaroyv Institute of Semiconductor Physics NAS of Ukraine, Ukraine)

  • Glib Dorozinsky

    (V. Lashkaroyv Institute of Semiconductor Physics NAS of Ukraine, Ukraine)

  • Hanna Dorozinska

    (National Technical University of Ukraine “Igor Sikorsky Kyiv Polytechnic Institute”, Ukraine)

  • Natalia Kachur

    (V. Lashkaroyv Institute of Semiconductor Physics NAS of Ukraine, Ukraine)

  • Volodymyr Maslov

    (V. Lashkaroyv Institute of Semiconductor Physics NAS of Ukraine, Ukraine)

Abstract

Considered in this work are the possibility and advantages of applying a Ge photodiode to measure the surface plasmon resonance (SPR) in the near infrared range (IR). The investigations were performed using the prototype of IR SPR refractometer that operates with two fixed wavelengths (1310 and 1552 nm) for excitation of surface plasmons in a thin gold film in the Kretschmann optical scheme. The obtained results of experiments enabled us to draw the conclusion that application of the Ge photodiode in the SPR sensor at the wavelength 1.5 µm allows increasing the sensitivity and response magnitude as well as widening the dynamic range of this sensor device.

Suggested Citation

Handle: RePEc:epw:physic:v:3:y:2021:i:4:id:11095
DOI: 10.24018/ejphysics.2021.3.4.95
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