Author
Listed:
- Elmira A. Jafarova
(Azerbaijan National Academy of Sciences G.M.Abdullayev Institute of Physics)
- Ziraddin Y. Sadygov
(Joint Institute for Nuclear Research, Dubna.)
- Ali Huseyn A. Dovlatov
(Department of Physics, Azerbaijan State Oil and Industry University, Baku.)
- Lala A. Aliyeva
(Institute of Physics Azerbaijan National Academy of Sciences Baku.)
- Eldar S. Tapdygov
(Institute of Physics Azerbaijan National Academy of Sciences, Baku.)
- Kamala A. Askerova
(Institute of Physics Azerbaijan National Academy of Sciences, Baku.)
Abstract
There have been investigated reactive properties of silicon avalanche photodiodes (MAPD- Micropixel Avalanche Photodiode) with deeply buried micropixels (amplification channels) within AC signal frequencies f= (50-500) kHz.By experiment is found out that measured capacitance of structures involving three p-n junctions in section passing through the pixels increases exponentially with Ufor (negative potential is applying to n-Si substrate) reaches maximum and at certain value Ufor= Uinv changes the sign becoming the negative capacitance (equivalent inductance).The magnitude of active component of complete conduction G grows with the applied voltage and reaches maximum value ~70 mS at Ufor= 1,0 V (f=500 kHz). There has been calculated difference in phase j appearing between current and voltage and it is shown that at Ufor=0 V the j = 80o and passes through the zero at Ufor = 0,55 V. The magnitude of negative capacitance recalculated to the inductance value with the growth of forward bias being decreased sharply tends to the saturation.
Suggested Citation
Elmira A. Jafarova & Ziraddin Y. Sadygov & Ali Huseyn A. Dovlatov & Lala A. Aliyeva & Eldar S. Tapdygov & Kamala A. Askerova, 2018.
"Negative Capacitance on Silicon Avalanche Photodiodes with Deeply Buried Micropixels,"
European Journal of Engineering and Technology Research, European Open Science, vol. 3(4), pages 61-64, April.
Handle:
RePEc:epw:ejeng0:v:3:y:2018:i:4:id:60701
DOI: 10.24018/ejeng.2018.3.4.701
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