Doping Effect of Pocket Implementation in MOSFET

This doping may be critical in MOSFET technology which is among the most commonly used technologies in the manufacturing of electronic gadgets. Doping affects the profile of an MOSFET gate length, channel length and pocket concentration without which the functionality of an electronic device cannot be overemphasise . The specific goals of this thesis are to propose in-pocket designs for Si, Ge and GaAs. Next, we will discuss parameters such as gate length and channel length threshold voltage, pocket definitions and leakage current in semiconductors. This work requires the understanding and predicting the electronic properties of doped NMOSFET and their responses to different stimuli. This thesis will thus provide good insight into the effects of doping on the electronic attributes of semiconductors. The observations recorded in this thesis include on-gate length, channel length, pocket concentration, threshold voltage, short channel impact, pocket implementation, and leakage current. Analyzing the outcomes in the controlled experiment, the authors stated the dependence between threshold voltage and atomic density, leakage current and atomic density, short channel effects and atomic density, threshold voltage and leakage current with short channel effects and the ratio between channel length and gate length.