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Parametric Simulation Study of Control Coefficients on the On-Off Current Ratio of Single-Walled Carbon Nanotube Field Effect Transistor

Author

Listed:
  • Md. Sayed Farahan

    (Ahsanullah University of Science and Technology, Bangladesh)

  • Shaeekul Ameen

    (Ahsanullah University of Science and Technology, Bangladesh)

  • Md. Farhun Monsur

    (Ahsanullah University of Science and Technology, Bangladesh)

  • Md Faysal Nayan

    (Ahsanullah University of Science and Technology, Bangladesh)

Abstract

As the semiconductor business faces increasing technical and financial challenges, it is crucial to assess and analyze new ideas thoroughly. The unique properties of carbon nanotubes make them a promising material for applications in micro and nanoelectronics. The study focused on simulating the impact of control coefficients (gate and drain) on device characteristics. The simulation results were then analyzed using existing models. This research focused on studying the ION/IOFF ratio by varying the thickness and diameter of the nanotubes. The control coefficients have been observed to have an impact on the current levels. Increasing the drain control coefficient negatively impacts device performance, while raising the gate control coefficient positively affects the current ratio.

Suggested Citation

  • Md. Sayed Farahan & Shaeekul Ameen & Md. Farhun Monsur & Md Faysal Nayan, 2023. "Parametric Simulation Study of Control Coefficients on the On-Off Current Ratio of Single-Walled Carbon Nanotube Field Effect Transistor," European Journal of Electrical Engineering and Computer Science, European Open Science, vol. 7(5), pages 58-62, September.
    • Handle: RePEc:epw:ejece0:v:7:y:2023:i:5:id:19570
    DOI: 10.24018/ejece.2023.7.5.570
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