Numerical Investigation of High Efficiency Cu₂SnSe₃ Thin Film Solar Cell with a Suitable ZnSe Buffer Layer Using SCAPS 1D Software

As the world’s energy demand continues to grow, thin-film solar cells are poised to play an increasingly important role in meeting that demand. In this research, we have proposed and simulated a high-efficiency Cu2SnSe3- based thin film solar cell structure using a solar cell capacitance simulator (SCAPS-1D) software. The numerical performance of Cu2SnSe3 thin films solar cell with ZnO:Al as the electron transport layer (ETL), ZnSe as the buffer layer, SnS as the hole transport layer (HTL), Ag as the front and Ni as the back contact with the structure (Ag/ZnO:Al/Cu2SnSe3/SnS/Ni) has been studied. This simulation intended to investigate the effect of the ZnO:Al electron transport layer and SnS hole transport layer on the performance of the proposed solar cell. The device was optimized concerning the thickness, temperature, series and shunt resistance, donor density of the Electron transport layer, back contact metal work function, and acceptor density of the Cu2SnSe3-based thin film solar cell. The thickness of the ETL, buffer, absorber, and HTL was optimized to 0.2 μm, 0.05 μm, 1.5 μm, and 0.1 μm, respectively. The proposed cadmium-free Cu2SnSe3 thin films solar cell exhibited a conversion efficiency of 31.04%, VOC of 1.08 V, JSC of 34.11 mA/cm2, and FF of 83.84%. As a result, due to its low cost, earth-abundant, non-toxicity, and high efficiency, the suggested Cu2SnSe3-based solar cell may be an attractive candidate for thin film solar cells.