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Drift velocity in GaN semiconductors: Monte Carlo simulation and comparison with experimental measurements

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  • Kablukova Evgenia

    (Institute of Computational Mathematics and Mathematical Geophysics, Siberian Branch of Russian Academy of Science, Lavrentiev Prosp. 6, Novosibirsk, 630090, Russia)

  • Sabelfeld Karl

    (Institute of Computational Mathematics and Mathematical Geophysics, Siberian Branch of Russian Academy of Science, Lavrentiev Prosp. 6; and Novosibirsk State University, Pirogov str. 2, Novosibirsk, 630090, Russia)

  • Protasov Dmitrii Y.

    (Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Lavrentiev Prosp. 13, 630090; and Novosibirsk State Technical University, 20, K. Marx av., Novosibirsk, 630073, Russia)

  • Zhuravlev Konstantin S.

    (Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Lavrentiev Prosp. 13; and Novosibirsk State University, Pirogov Str. 2, Novosibirsk, 630090, Russia)

Abstract

Monte Carlo algorithms are developed to simulate the electron transport in semiconductors. In particular, the drift velocity in GaN semiconductors is calculated, and a comparison with experimental measurements is discussed. Explicit expressions for the scattering probabilities and distributions of the scattering angle of electrons on polar optical and intervalley phonons, and acoustic deformation potential as well are given. A good agreement of the simulation results and the experimental measurements reveals that the M-L valley is located at 0.7 eV higher than the Γ-valley. This value agrees with other experimental studies, while it is lower compared to ab initio calculations.

Suggested Citation

  • Kablukova Evgenia & Sabelfeld Karl & Protasov Dmitrii Y. & Zhuravlev Konstantin S., 2020. "Drift velocity in GaN semiconductors: Monte Carlo simulation and comparison with experimental measurements," Monte Carlo Methods and Applications, De Gruyter, vol. 26(4), pages 263-271, December.
    • Handle: RePEc:bpj:mcmeap:v:26:y:2020:i:4:p:263-271:n:7
    DOI: 10.1515/mcma-2020-2077
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