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Study and simulation of the sputtering process of material layers in plasma

Author

Listed:
  • Bouazza Abdelkader

    (Electrical Engineering Department, University of Sciences and Technology, P.O. Box 1505 El-M'Naouar, Oran, Algeria)

  • Settaouti Abderrahmane

    (Electrical Engineering Department, University of Sciences and Technology, P.O. Box 1505 El-M'Naouar, Oran, Algeria)

Abstract

Sputtering is characterized by a sputtering yield ratio which depends on several conditions, in particular the incident ions energy to the cathode, in normal incidence and when considers the angle α of the incident ions. Our investigations may be considered in first step to calculate the sputtering yield of three metals: copper, silver, and aluminum collide with argon, xenon, oxygen and nitrogen ions using highly developed software called SRIM (Stopping and Range of Ions in Matter) with normal incidence, then with varied angles in future works. The results obtained are compared with those obtained using the analytical models based on the Monte Carlo method proposed by researchers as Sigmund and Yamamaura in order to validate models.

Suggested Citation

  • Bouazza Abdelkader & Settaouti Abderrahmane, 2016. "Study and simulation of the sputtering process of material layers in plasma," Monte Carlo Methods and Applications, De Gruyter, vol. 22(2), pages 149-159, June.
    • Handle: RePEc:bpj:mcmeap:v:22:y:2016:i:2:p:149-159:n:3
    DOI: 10.1515/mcma-2016-0106
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