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New Boron Deposition Model Based on Thin Oxide Film in Process of High Frequency Transistor

Author

Listed:
  • NamChol Yu

    (Kim Chaek University of Technology, Pyongyang, Democratic People’s Republic of Korea)

  • IlRyong Bong

    (Sariwon College of Technology, North HuangHae, Democratic People’s Republic of Korea)

  • ChenNam Kim

    (University of Science, Pyongyang, Democratic People’s Republic of Korea)

  • SongChol Yang

    (Pyongsong University of Education, South Pyongan, Democratic People’s Republic of Korea)

Abstract

This paper reports new deposition model of boron impurity considered formation of oxide film during deposition process. Finally, we have considered the impurity concentration change in silicon surface and found that diffusion coefficient in the thin oxide film increases more 100 times than the thick oxide film. The result contributes to get the accurate simulation value. This new boron deposition model will apply to find the formation condition of base layer in fabrication process of high-frequency transistor.

Suggested Citation

  • NamChol Yu & IlRyong Bong & ChenNam Kim & SongChol Yang, 2025. "New Boron Deposition Model Based on Thin Oxide Film in Process of High Frequency Transistor," International Journal of Research and Innovation in Applied Science, International Journal of Research and Innovation in Applied Science (IJRIAS), vol. 10(9), pages 988-994, October.
    • Handle: RePEc:bjf:journl:v:10:y:2025:i:9:p:988-994
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