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Physical Properties of Zno: Ga2O3 Thin Film Prepared by Microwave-Assisted Pyrolysis: The Role Ga2O3

Author

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  • Hendra Dwi Gunawan

    (Physics Department, Universitas Negeri Semarang, Semarang, Indonesia)

  • Sulhadi.

    (Physics Department, Universitas Negeri Semarang, Semarang, Indonesia)

  • Putut Marwoto

    (Physics Department, Universitas Negeri Semarang, Semarang, Indonesia)

  • Fristian Rifita

    (Physics Department, Universitas Negeri Semarang, Semarang, Indonesia)

Abstract

We have successfully developed high-quality polycrystalline ZnO: Ga₂O₃ thin films using the microwave-assisted spray pyrolysis method. The variation of Ga₂ O₃ doping (0-6%) resulted in significant changes in the morphology, crystal structure, and optical properties of the thin films. The 3% Ga₂ O₃-doped sample exhibited excellent crystal quality with the smallest Full Width at Half Maximum (FWHM) value of 0.16°, high transmittance (96%), and a suitable band gap (3.21 eV) for applications in sensor systems, optoelectronic devices, and solar cells. This study presents a significant advancement in the development of high-quality ZnO: Ga₂O₃ thin films with superior characteristics for various applications.

Suggested Citation

  • Hendra Dwi Gunawan & Sulhadi. & Putut Marwoto & Fristian Rifita, 2025. "Physical Properties of Zno: Ga2O3 Thin Film Prepared by Microwave-Assisted Pyrolysis: The Role Ga2O3," International Journal of Research and Innovation in Applied Science, International Journal of Research and Innovation in Applied Science (IJRIAS), vol. 10(5), pages 781-789, May.
    • Handle: RePEc:bjf:journl:v:10:y:2025:i:5:p:781-789
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