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Thickness Dependent Thermoelectric Properties of Pb0.4In0.6Se Thin Films Deposited by Physical Evaporation Technique

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  • K. S. Chaudhari

    (S.V. S’s Dadasaheb Rawal College, Dondaicha, Dist Dhule (M.S.))

Abstract

Thin films having different thickness of Pb0.4In0.6Se were deposited by thermal evaporation techniques, onto precleaned amorphous glass substrate. The structural properties of films were evaluated by XRD, optical microscopy, SEM and EDAX. The thermoelectric of annealed thin films have been evaluated. Thermoelectric Properties shows a positive sign exhibiting p- type nature of films. Fermi energy and scattering parameter were determined. The calculated values of Fermi energy and scattering parameter are 4 to 0.4 eV and 0.184 to 0.127 respectively. The X-ray diffraction analysis confirms that films are polycrystalline having orthorhombic structure. The average grain size is found to be 27.08 nm.

Suggested Citation

  • K. S. Chaudhari, 2025. "Thickness Dependent Thermoelectric Properties of Pb0.4In0.6Se Thin Films Deposited by Physical Evaporation Technique," International Journal of Research and Scientific Innovation, International Journal of Research and Scientific Innovation (IJRSI), vol. 12(8), pages 1007-1011, August.
    • Handle: RePEc:bjc:journl:v:12:y:2025:i:8:p:1007-1011
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