Author
Abstract
This study addresses the durability issues of barcode substrates for photovoltaic (PV) modules under extreme conditions such as high temperature, high humidity, and intense ultraviolet (UV) radiation. A three-layer structured barcode substrate with high-temperature resistance and anti-aging properties was developed, and the die-cutting process was optimized. The three-layer structure consists of a polyethylene terephthalate (PET) substrate layer, a polyimide (PI) anti-aging layer, and a wear-resistant coating. The synergistic effect of these layers significantly enhances the substrate’s temperature resistance and anti-aging performance. Experimental results indicate that after 100 thermal cycles, the tensile strength retention rate of the three-layer structured substrate reaches 92%, much higher than the 65% of traditional PET substrate. After 1000 hours of UV irradiation, the color difference (ΔE) is only 1.5, compared to the 4.0 of traditional PET substrate. Following the optimization of the die-cutting process, the burr rate was reduced from 8% to 0.5%, and the material utilization rate increased from 82% to 95%. In the pilot application at Mingyang Smart and the long-term testing in desert power stations, the three-layer structured barcode substrate demonstrated excellent performance, with a barcode integrity rate of 98%, significantly higher than the 70% of traditional PET substrate. This study provides significant technical support for the development of barcode substrates for PV modules, promoting the high-quality development of the PV industry.
Suggested Citation
Quanzhen Ding, 2025.
"Development and Die-Cutting Process Optimization of High-Temperature-Resistant and Anti-Aging Barcode Substrate for Photovoltaic Modules,"
Innovation in Science and Technology, Paradigm Academic Press, vol. 4(8), pages 22-28, September.
Handle:
RePEc:bdz:inscte:v:4:y:2025:i:8:p:22-28
DOI: 10.63593/IST.2788-7030.2025.09.004
Download full text from publisher
Corrections
All material on this site has been provided by the respective publishers and authors. You can help correct errors and omissions. When requesting a correction, please mention this item's handle: RePEc:bdz:inscte:v:4:y:2025:i:8:p:22-28. See general information about how to correct material in RePEc.
If you have authored this item and are not yet registered with RePEc, we encourage you to do it here. This allows to link your profile to this item. It also allows you to accept potential citations to this item that we are uncertain about.
We have no bibliographic references for this item. You can help adding them by using this form .
If you know of missing items citing this one, you can help us creating those links by adding the relevant references in the same way as above, for each refering item. If you are a registered author of this item, you may also want to check the "citations" tab in your RePEc Author Service profile, as there may be some citations waiting for confirmation.
For technical questions regarding this item, or to correct its authors, title, abstract, bibliographic or download information, contact: Editorial Office (email available below). General contact details of provider: https://www.paradigmpress.org/ .
Please note that corrections may take a couple of weeks to filter through
the various RePEc services.