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A Novel Recessed p-NiO/TiN Composite Anode AlGaN/GaN Schottky Diodes

Author

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  • Peng, Sen
  • Li, Yang
  • Li, Yang

Abstract

To improve the breakdown voltage (BV) of AlGaN/GaN heterojunction Schottky barrier diodes while maintaining a low turn-on voltage (VTH), this work proposes an AlGaN/GaN Schottky diode with a composite anode structure composed of p-type NiO and TiN. In this structure, the p-NiO anode can deplete the two-dimensional electron gas (2DEG) under reverse bias, effectively achieving low leakage current (IR) of the device; the TiN anode ensures a low VTH by virtue of its low work function. In addition, under reverse bias conditions, the recessed p-NiO structure can block the lateral electric field in the AlGaN barrier layer, alleviate the electric field crowding beneath the TiN anode, and thereby enhance the BV of the device.

Suggested Citation

  • Peng, Sen & Li, Yang & Li, Yang, 2026. "A Novel Recessed p-NiO/TiN Composite Anode AlGaN/GaN Schottky Diodes," GBP Proceedings Series, Scientific Open Access Publishing, vol. 20, pages 110-116.
  • Handle: RePEc:axf:gbppsa:v:20:y:2026:i::p:110-116
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