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The Study of ZnO-NRs and Ge-chips Bandgaps for the Elimination of Elemental Semiconductors and Compound Semiconductors Applications

Author

Listed:
  • Mohammad Mohsen Hewadmal

    (Department of Physic, Education Faculty, Badakhshan University, Badakhshan, Afghanistan)

  • Mujibullah Mahboob

    (Department of Physic, Education Faculty, Balkh University, Balkh, Afghanistan)

  • Sayed Abdul Saboor Mosamem

    (Department of Physic, Education Faculty, Baghlan University, Baghlan, Afghanistan)

Abstract

In this paper, the bandgap of Germanium (Ge) and Zinc-Oxid (ZnO) materials were studied using two different techniques called the four-probe method and UV-Visible spectroscopy. A chip of Ge and a ZnO synthesized Nanorods on the FTO substrate were utilized as the samples. Scanning electron microscopy and X-ray diffraction spectroscopy were applied to understand the morphology and the crystal structure of the ZnO particles on the substrate. To get bandgap for Ge, the variation of voltage concerning temperature in current was recorded, and for ZnO- Nanorods (NRs), the absorption spectra in the range of (200-800) nm were taken. Based on obtained data and calculations, the band gap of Ge and ZnO-NRs were determined to be around and respectively. It revealed that the bandgap of compound semiconductors (ZnO- NRs) could be sufficiently large as compared to the elemental semiconductors (Ge), and through that, the modification of various devices is possible in the industry.

Suggested Citation

Handle: RePEc:alk:ijbpcs:v:5:y:2023:i:1:id:5328
DOI: 10.32996/ijbpcs.2023.5.1.3
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