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Non-volatile memory based on the ferroelectric photovoltaic effect

Author

Listed:
  • Rui Guo

    (School of Materials Science and Engineering, Nanyang Technological University)

  • Lu You

    (School of Materials Science and Engineering, Nanyang Technological University)

  • Yang Zhou

    (School of Materials Science and Engineering, Nanyang Technological University)

  • Zhi Shiuh Lim

    (School of Materials Science and Engineering, Nanyang Technological University)

  • Xi Zou

    (School of Materials Science and Engineering, Nanyang Technological University)

  • Lang Chen

    (School of Materials Science and Engineering, Nanyang Technological University)

  • R. Ramesh

    (University of California)

  • Junling Wang

    (School of Materials Science and Engineering, Nanyang Technological University)

Abstract

The quest for a solid state universal memory with high-storage density, high read/write speed, random access and non-volatility has triggered intense research into new materials and novel device architectures. Though the non-volatile memory market is dominated by flash memory now, it has very low operation speed with ~10 μs programming and ~10 ms erasing time. Furthermore, it can only withstand ~105 rewriting cycles, which prevents it from becoming the universal memory. Here we demonstrate that the significant photovoltaic effect of a ferroelectric material, such as BiFeO3 with a band gap in the visible range, can be used to sense the polarization direction non-destructively in a ferroelectric memory. A prototype 16-cell memory based on the cross-bar architecture has been prepared and tested, demonstrating the feasibility of this technique.

Suggested Citation

  • Rui Guo & Lu You & Yang Zhou & Zhi Shiuh Lim & Xi Zou & Lang Chen & R. Ramesh & Junling Wang, 2013. "Non-volatile memory based on the ferroelectric photovoltaic effect," Nature Communications, Nature, vol. 4(1), pages 1-5, October.
    • Handle: RePEc:nat:natcom:v:4:y:2013:i:1:d:10.1038_ncomms2990
    DOI: 10.1038/ncomms2990
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    Cited by:

    1. Yue Niu & Lei Li & Zhiying Qi & Hein Htet Aung & Xinyi Han & Reshef Tenne & Yugui Yao & Alla Zak & Yao Guo, 2023. "0D van der Waals interfacial ferroelectricity," Nature Communications, Nature, vol. 14(1), pages 1-9, December.
    2. Thanh Tung, Nguyen & Taxil, Gaspard & Nguyen, Hung Hoang & Ducharne, Benjamin & Lallart, Mickaël & Lefeuvre, Elie & Kuwano, Hiroki & Sebald, Gael, 2022. "Ultimate electromechanical energy conversion performance and energy storage capacity of ferroelectric materials under high excitation levels," Applied Energy, Elsevier, vol. 326(C).
    3. Yan Sun & Shuting Xu & Zheqi Xu & Jiamin Tian & Mengmeng Bai & Zhiying Qi & Yue Niu & Hein Htet Aung & Xiaolu Xiong & Junfeng Han & Cuicui Lu & Jianbo Yin & Sheng Wang & Qing Chen & Reshef Tenne & All, 2022. "Mesoscopic sliding ferroelectricity enabled photovoltaic random access memory for material-level artificial vision system," Nature Communications, Nature, vol. 13(1), pages 1-8, December.

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