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Mesoscopic sliding ferroelectricity enabled photovoltaic random access memory for material-level artificial vision system

Author

Listed:
  • Yan Sun

    (Beijing Institute of Technology)

  • Shuting Xu

    (Beijing Institute of Technology)

  • Zheqi Xu

    (Beijing Institute of Technology)

  • Jiamin Tian

    (Peking University)

  • Mengmeng Bai

    (Beijing Institute of Technology)

  • Zhiying Qi

    (Beijing Institute of Technology)

  • Yue Niu

    (Beijing Institute of Technology)

  • Hein Htet Aung

    (Beijing Institute of Technology)

  • Xiaolu Xiong

    (Beijing Institute of Technology)

  • Junfeng Han

    (Beijing Institute of Technology)

  • Cuicui Lu

    (Beijing Institute of Technology)

  • Jianbo Yin

    (Beijing Graphene Institute)

  • Sheng Wang

    (Peking University)

  • Qing Chen

    (Peking University)

  • Reshef Tenne

    (Weizmann Institute of Science)

  • Alla Zak

    (Holon Institute of Technology)

  • Yao Guo

    (Beijing Institute of Technology)

Abstract

Intelligent materials with adaptive response to external stimulation lay foundation to integrate functional systems at the material level. Here, with experimental observation and numerical simulation, we report a delicate nano-electro-mechanical-opto-system naturally embedded in individual multiwall tungsten disulfide nanotubes, which generates a distinct form of in-plane van der Waals sliding ferroelectricity from the unique combination of superlubricity and piezoelectricity. The sliding ferroelectricity enables programmable photovoltaic effect using the multiwall tungsten disulfide nanotube as photovoltaic random-access memory. A complete “four-in-one” artificial vision system that synchronously achieves full functions of detecting, processing, memorizing, and powering is integrated into the nanotube devices. Both labeled supervised learning and unlabeled reinforcement learning algorithms are executable in the artificial vision system to achieve self-driven image recognition. This work provides a distinct strategy to create ferroelectricity in van der Waals materials, and demonstrates how intelligent materials can push electronic system integration at the material level.

Suggested Citation

  • Yan Sun & Shuting Xu & Zheqi Xu & Jiamin Tian & Mengmeng Bai & Zhiying Qi & Yue Niu & Hein Htet Aung & Xiaolu Xiong & Junfeng Han & Cuicui Lu & Jianbo Yin & Sheng Wang & Qing Chen & Reshef Tenne & All, 2022. "Mesoscopic sliding ferroelectricity enabled photovoltaic random access memory for material-level artificial vision system," Nature Communications, Nature, vol. 13(1), pages 1-8, December.
  • Handle: RePEc:nat:natcom:v:13:y:2022:i:1:d:10.1038_s41467-022-33118-x
    DOI: 10.1038/s41467-022-33118-x
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    References listed on IDEAS

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    1. Dongyang Yang & Jing Liang & Jingda Wu & Yunhuan Xiao & Jerry I. Dadap & Kenji Watanabe & Takashi Taniguchi & Ziliang Ye, 2024. "Non-volatile electrical polarization switching via domain wall release in 3R-MoS2 bilayer," Nature Communications, Nature, vol. 15(1), pages 1-8, December.

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