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High output mode-locked laser empowered by defect regulation in 2D Bi2O2Se saturable absorber

Author

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  • Junting Liu

    (Shandong University)

  • Fang Yang

    (Southeast University)

  • Junpeng Lu

    (Southeast University)

  • Shuai Ye

    (Shandong University)

  • Haowen Guo

    (Shandong University)

  • Hongkun Nie

    (Shandong University)

  • Jialin Zhang

    (Southeast University)

  • Jingliang He

    (Shandong University)

  • Baitao Zhang

    (Shandong University)

  • Zhenhua Ni

    (Southeast University)

Abstract

Atomically thin Bi2O2Se has emerged as a novel two-dimensional (2D) material with an ultrabroadband nonlinear optical response, high carrier mobility and excellent air stability, showing great potential for the realization of optical modulators. Here, we demonstrate a femtosecond solid-state laser at 1.0 µm with Bi2O2Se nanoplates as a saturable absorber (SA). Upon further defect regulation in 2D Bi2O2Se, the average power of the mode-locked laser is improved from 421 mW to 665 mW, while the pulse width is decreased from 587 fs to 266 fs. Moderate Ar+ plasma treatments are employed to precisely regulate the O and Se defect states in Bi2O2Se nanoplates. Nondegenerate pump-probe measurements show that defect engineering effectively accelerates the trapping rate and defect-assisted Auger recombination rate of photocarriers. The saturation intensity is improved from 3.6 ± 0.2 to 12.8 ± 0.6 MW cm−2 after the optimized defect regulation. The enhanced saturable absorption and ultrafast carrier lifetime endow the high-performance mode-locked laser with both large output power and short pulse duration.

Suggested Citation

  • Junting Liu & Fang Yang & Junpeng Lu & Shuai Ye & Haowen Guo & Hongkun Nie & Jialin Zhang & Jingliang He & Baitao Zhang & Zhenhua Ni, 2022. "High output mode-locked laser empowered by defect regulation in 2D Bi2O2Se saturable absorber," Nature Communications, Nature, vol. 13(1), pages 1-8, December.
  • Handle: RePEc:nat:natcom:v:13:y:2022:i:1:d:10.1038_s41467-022-31606-8
    DOI: 10.1038/s41467-022-31606-8
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    References listed on IDEAS

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