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High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity

Author

Listed:
  • Kibum Kang

    (Cornell University)

  • Saien Xie

    (School of Applied and Engineering Physics, Cornell University)

  • Lujie Huang

    (Cornell University)

  • Yimo Han

    (School of Applied and Engineering Physics, Cornell University)

  • Pinshane Y. Huang

    (School of Applied and Engineering Physics, Cornell University)

  • Kin Fai Mak

    (Kavli Institute at Cornell for Nanoscale Science
    Laboratory of Atomic and Solid State Physics, Cornell University)

  • Cheol-Joo Kim

    (Cornell University)

  • David Muller

    (School of Applied and Engineering Physics, Cornell University
    Kavli Institute at Cornell for Nanoscale Science)

  • Jiwoong Park

    (Cornell University
    Kavli Institute at Cornell for Nanoscale Science)

Abstract

A new chemical vapour deposition method enables transition-metal dichalcogenide (TMD) monolayers to be grown directly on insulating silicon dioxide wafers, demonstrating the possibility of wafer-scale batch fabrication of high-performance devices with TMD monolayers.

Suggested Citation

  • Kibum Kang & Saien Xie & Lujie Huang & Yimo Han & Pinshane Y. Huang & Kin Fai Mak & Cheol-Joo Kim & David Muller & Jiwoong Park, 2015. "High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity," Nature, Nature, vol. 520(7549), pages 656-660, April.
    • Handle: RePEc:nat:nature:v:520:y:2015:i:7549:d:10.1038_nature14417
    DOI: 10.1038/nature14417
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    Cited by:

    1. Fatemeh Shahi & Parviz Parvin & Seyedeh Zahra Mortazavi & Ali Reyhani & Mohtada Sadrzadeh & Ali Moafi & Mahdi Ebrahimi & Mohammadreza Aghaei, 2022. "In-Situ Generation of Nitrogen-Doped MoS 2 Quantum Dots Using Laser Ablation in Cryogenic Medium for Hydrogen Evolution Reaction," Energies, MDPI, vol. 16(1), pages 1-15, December.

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