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In-Situ Generation of Nitrogen-Doped MoS 2 Quantum Dots Using Laser Ablation in Cryogenic Medium for Hydrogen Evolution Reaction

Author

Listed:
  • Fatemeh Shahi

    (Energy Engineering and Physics Department, Amirkabir University of Technology, Tehran 15119-43943, Iran)

  • Parviz Parvin

    (Energy Engineering and Physics Department, Amirkabir University of Technology, Tehran 15119-43943, Iran)

  • Seyedeh Zahra Mortazavi

    (Faculty of Science, Department of Physics, Imam Khomeini International University, Qazvin 34149-16818, Iran)

  • Ali Reyhani

    (Faculty of Science, Department of Physics, Imam Khomeini International University, Qazvin 34149-16818, Iran)

  • Mohtada Sadrzadeh

    (Mechanical Engineering Department, University of Alberta, Edmonton, AB T6G 2R3, Canada)

  • Ali Moafi

    (Energy Engineering and Physics Department, Amirkabir University of Technology, Tehran 15119-43943, Iran)

  • Mahdi Ebrahimi

    (Energy Engineering and Physics Department, Amirkabir University of Technology, Tehran 15119-43943, Iran)

  • Mohammadreza Aghaei

    (Department of Ocean Operations and Civil Engineering, Norwegian University of Science and Technology (NTNU), 6009 Ålesund, Norway
    Department of Sustainable Systems Engineering (INATECH), University of Freiburg, 79110 Freiburg, Germany)

Abstract

Here, nitrogen doped molybdenum disulfide quantum dots (N-MoS 2 QDs) are fabricated by making use of the pulsed laser ablation (PLA) process in liquid nitrogen (LN 2 ) as a dopant agent. In fact, LN 2 contributes the rapid condensation of the plasma plume to form MoS 2 QDs, optimizing the conditions for the synthesis of N-doped MoS 2 with p-type property. The structural/optical features of the synthesized products are studied using transmission electron microscopy (TEM), absorption spectroscopy, photoluminescence (PL) spectroscopy techniques, and X-ray photoelectron spectroscopy (XPS). The TEM image shows the creation of MoS 2 QDs with 5.5 nm average size. UV-vis and PL spectroscopy confirm the formation of N-MoS 2 QDs according to the dominant peaks. The Tuck plot gives a direct band-gap of 4.34 eV for MoS 2 QDs. Furthermore, XPS spectroscopy reveals Mo-N bonding, indicating nitrogen doping as evidence of p-type MoS 2 QDs. Thus, PLA provides a single-stage way to the clean and green synthesis of the MoS 2 QDs suspension without a need for high vacuum devices and additional chemical components. Regarding the pristine MoS 2 , the N-MoS 2 QDs benefit from a low overpotential of −0.35 V at −10 mA/cm 2 per µg alongside a low Tafel slope of 300 mV/dec. Subsequently, the lower R ct value of N-MoS 2 QDs verifies the enhancement of the charge transfer kinetics mainly due to the elevated electronic conductivity. Furthermore, the quasi-rectangular cyclic voltammetry (CV) as well as the larger current window demonstrate a notable electrocatalytic activity. The former is based on the enhanced active sites in favor of N-MoS 2 QDs against other samples of interest. Thereby, it is discovered that the N-doped MoS 2 QD acts as an effective catalyst to notably improve the performance of the hydrogen evolution reaction (HER).

Suggested Citation

  • Fatemeh Shahi & Parviz Parvin & Seyedeh Zahra Mortazavi & Ali Reyhani & Mohtada Sadrzadeh & Ali Moafi & Mahdi Ebrahimi & Mohammadreza Aghaei, 2022. "In-Situ Generation of Nitrogen-Doped MoS 2 Quantum Dots Using Laser Ablation in Cryogenic Medium for Hydrogen Evolution Reaction," Energies, MDPI, vol. 16(1), pages 1-15, December.
  • Handle: RePEc:gam:jeners:v:16:y:2022:i:1:p:455-:d:1021687
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    1. Kibum Kang & Saien Xie & Lujie Huang & Yimo Han & Pinshane Y. Huang & Kin Fai Mak & Cheol-Joo Kim & David Muller & Jiwoong Park, 2015. "High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity," Nature, Nature, vol. 520(7549), pages 656-660, April.
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