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Silicon Heterojunction Solar Cells Using AlO x and Plasma-Immersion Ion Implantation

Author

Listed:
  • Yu-Hsien Lin

    (Department of Electronic Engineering, National United University, No. 1, Lienda, Miaoli 36003, Taiwan)

  • Yung-Chun Wu

    (Department of Engineering and System Science, National Tsing Hua University, No. 101, Section 2, Kuang-Fu Road, Hsinchu, 30013, Taiwan)

  • Hsin-Chiang You

    (Department of Electronic Engineering, National Chin-Yi University of Technology, No. 57, Sec. 2, Zhongshan Rd., Taiping Dist., Taichung 41170, Taiwan)

  • Chun-Hao Chen

    (Department of Engineering and System Science, National Tsing Hua University, No. 101, Section 2, Kuang-Fu Road, Hsinchu, 30013, Taiwan)

  • Ping-Hua Chen

    (Department of Electronic Engineering, National United University, No. 1, Lienda, Miaoli 36003, Taiwan)

  • Yi-He Tsai

    (Department of Electronic Engineering, National United University, No. 1, Lienda, Miaoli 36003, Taiwan)

  • Yi-Yun Yang

    (Department of Electronic Engineering, National United University, No. 1, Lienda, Miaoli 36003, Taiwan)

  • K. S. Chang-Liao

    (Department of Engineering and System Science, National Tsing Hua University, No. 101, Section 2, Kuang-Fu Road, Hsinchu, 30013, Taiwan)

Abstract

Aluminum oxide (AlO x ) and plasma immersion ion implantation (PIII) were studied in relation to passivated silicon heterojunction solar cells. When aluminum oxide (AlO x ) was deposited on the surface of a wafer; the electric field near the surface of wafer was enhanced; and the mobility of the carrier was improved; thus reducing carrier traps associated with dangling bonds. Using PIII enabled implanting nitrogen into the device to reduce dangling bonds and achieve the desired passivation effect. Depositing AlO x on the surface of a solar cell increased the short-circuit current density ( J sc ); open-circuit voltage ( V oc ); and conversion efficiency from 27.84 mA/cm 2 ; 0.52 V; and 8.97% to 29.34 mA/cm 2 ; 0.54 V; and 9.68%; respectively. After controlling the depth and concentration of nitrogen by modulating the PIII energy; the ideal PIII condition was determined to be 2 keV and 10 min. As a result; a 15.42% conversion efficiency was thus achieved; and the J sc ; V oc ; and fill factor were 37.78 mA/cm 2 ; 0.55 V; and 0.742; respectively.

Suggested Citation

  • Yu-Hsien Lin & Yung-Chun Wu & Hsin-Chiang You & Chun-Hao Chen & Ping-Hua Chen & Yi-He Tsai & Yi-Yun Yang & K. S. Chang-Liao, 2014. "Silicon Heterojunction Solar Cells Using AlO x and Plasma-Immersion Ion Implantation," Energies, MDPI, vol. 7(6), pages 1-11, June.
    • Handle: RePEc:gam:jeners:v:7:y:2014:i:6:p:3653-3663:d:37058
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    References listed on IDEAS

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    1. Pang-Leen Ong & Igor A. Levitsky, 2010. "Organic / IV, III-V Semiconductor Hybrid Solar Cells," Energies, MDPI, vol. 3(3), pages 1-22, March.
    2. Kang-Shyang Liao & Soniya D. Yambem & Amrita Haldar & Nigel J. Alley & Seamus A. Curran, 2010. "Designs and Architectures for the Next Generation of Organic Solar Cells," Energies, MDPI, vol. 3(6), pages 1-39, June.
    3. Wasiu Adebayo Hammed & Rosiyah Yahya & Abdulra'uf Lukman Bola & Habibun Nabi Muhammad Ekramul Mahmud, 2013. "Recent Approaches to Controlling the Nanoscale Morphology of Polymer-Based Bulk-Heterojunction Solar Cells," Energies, MDPI, vol. 6(11), pages 1-22, November.
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