IDEAS home Printed from https://ideas.repec.org/a/wsi/srlxxx/v29y2022i08ns0218625x22500998.html
   My bibliography  Save this article

Interface Modification Of Substrate For Enhancing Adhesive Strength Of Cvd Diamond Coating By Solid Particles

Author

Listed:
  • FASONG JU

    (School Energy and Mechanical Engineering, Shanghai University of Electric Power, Shanghai 200090, P. R. China)

  • NAICHAO CHEN

    (School Energy and Mechanical Engineering, Shanghai University of Electric Power, Shanghai 200090, P. R. China†Shanghai Key Laboratory of Materials Protection and Advanced Materials in Electric Power, Shanghai 200090, P. R. China)

  • CHENYI CAO

    (School Energy and Mechanical Engineering, Shanghai University of Electric Power, Shanghai 200090, P. R. China)

  • DONGMEI LIU

    (School Energy and Mechanical Engineering, Shanghai University of Electric Power, Shanghai 200090, P. R. China)

  • JIN ZHAO

    (School Energy and Mechanical Engineering, Shanghai University of Electric Power, Shanghai 200090, P. R. China)

  • MINYONG ZHONG

    (School Energy and Mechanical Engineering, Shanghai University of Electric Power, Shanghai 200090, P. R. China)

Abstract

The strong adhesive strength is essential for the widespread applications of diamond coating in the mechanical field. In this paper, a novel method combining conventional chemical vapor deposition (CVD) diamond technique with solid particles was proposed to modify the interface material properties of substrate to improve the adhesive strength of the diamond coating. Prior to deposition, wet dispersion was adopted to uniformly distribute solid particles on the substrate, with which the diamond coatings with the WC, TiC and BN particles embedded at the interface were fabricated on Co-cemented tungsten carbide (WC-Co) substrate. In addition, the pure diamond coating was also fabricated for comparison. The as-deposited diamond coatings were characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM), energy dispersive X-ray spectroscopy (EDS) and Raman spectroscopy. The results indicated that the diamond coating with TiC exhibited the highest residual stress, which may be due to the larger lattice mismatch between TiC and diamond as compared to WC and BN. The indentation test suggested that WC and BN particles were favorable for the improvement of the adhesive strength and the crack resistance of diamond coating, while this phenomenon was not observed in the diamond coating with TiC particle. This might be caused by the large lattice parameter, high lattice mismatch, and high thermal expansion coefficient mismatch of TiC as compared with diamond. Furthermore, the lattice parameter of additional particles might be an important factor to determine whether or not the adhesive strength of diamond coating can be enhanced, because it determined the compressive stress or tensile stress generated inside diamond coating. Hence, interface modification of substrate by dispersing the solid particles with low lattice parameter or similar material properties of diamond may be an effective and convivence approach to improve the adhesive strength of the diamond coating.

Suggested Citation

  • Fasong Ju & Naichao Chen & Chenyi Cao & Dongmei Liu & Jin Zhao & Minyong Zhong, 2022. "Interface Modification Of Substrate For Enhancing Adhesive Strength Of Cvd Diamond Coating By Solid Particles," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 29(08), pages 1-10, August.
  • Handle: RePEc:wsi:srlxxx:v:29:y:2022:i:08:n:s0218625x22500998
    DOI: 10.1142/S0218625X22500998
    as

    Download full text from publisher

    File URL: http://www.worldscientific.com/doi/abs/10.1142/S0218625X22500998
    Download Restriction: Access to full text is restricted to subscribers

    File URL: https://libkey.io/10.1142/S0218625X22500998?utm_source=ideas
    LibKey link: if access is restricted and if your library uses this service, LibKey will redirect you to where you can use your library subscription to access this item
    ---><---

    As the access to this document is restricted, you may want to search for a different version of it.

    Corrections

    All material on this site has been provided by the respective publishers and authors. You can help correct errors and omissions. When requesting a correction, please mention this item's handle: RePEc:wsi:srlxxx:v:29:y:2022:i:08:n:s0218625x22500998. See general information about how to correct material in RePEc.

    If you have authored this item and are not yet registered with RePEc, we encourage you to do it here. This allows to link your profile to this item. It also allows you to accept potential citations to this item that we are uncertain about.

    We have no bibliographic references for this item. You can help adding them by using this form .

    If you know of missing items citing this one, you can help us creating those links by adding the relevant references in the same way as above, for each refering item. If you are a registered author of this item, you may also want to check the "citations" tab in your RePEc Author Service profile, as there may be some citations waiting for confirmation.

    For technical questions regarding this item, or to correct its authors, title, abstract, bibliographic or download information, contact: Tai Tone Lim (email available below). General contact details of provider: http://www.worldscinet.com/srl/srl.shtml .

    Please note that corrections may take a couple of weeks to filter through the various RePEc services.

    IDEAS is a RePEc service. RePEc uses bibliographic data supplied by the respective publishers.