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IMPACT OF INDIUM DOPING ON ZnO THIN FILM SUBJECTED TO APPROPRIATE UHV TREATMENT CHARACTERIZED BY XPS, XRD, AND PL TECHNIQUES

Author

Listed:
  • EDHAWYA HAMEURLAINE

    (Laboratory of Materials (LABMAT), National Polytechnique School (ENP) of Oran, Oran Mnaouar, Oran 31000, Algeria)

  • M’HAMED GUEZZOUL

    (Laboratory of Materials (LABMAT), National Polytechnique School (ENP) of Oran, Oran Mnaouar, Oran 31000, Algeria)

  • M’HAMMED BOUSLAMA

    (Laboratory of Materials (LABMAT), National Polytechnique School (ENP) of Oran, Oran Mnaouar, Oran 31000, Algeria)

  • ABDELLAH OUERDANE

    (Laboratory of Materials (LABMAT), National Polytechnique School (ENP) of Oran, Oran Mnaouar, Oran 31000, Algeria†University of Djillali Bounaama-Khemis Méliana, Ain Defla 44000, Algeria)

  • AMIRA DERRI

    (Laboratory of Materials (LABMAT), National Polytechnique School (ENP) of Oran, Oran Mnaouar, Oran 31000, Algeria)

  • MAHMOUD BEDROUNI

    (Laboratory of Materials (LABMAT), National Polytechnique School (ENP) of Oran, Oran Mnaouar, Oran 31000, Algeria)

  • KADDA BENMOHKTAR BENSASSI

    (Laboratory of Materials (LABMAT), National Polytechnique School (ENP) of Oran, Oran Mnaouar, Oran 31000, Algeria‡Laboratory of Electron Microscopy and Materials Science, University of Science and Technology, Mohamed Boudiaf of Oran 31000, Algeria)

  • ABDELHAK BAIZID

    (Laboratory of Materials (LABMAT), National Polytechnique School (ENP) of Oran, Oran Mnaouar, Oran 31000, Algeria)

  • MAHFOUD ABDELKRIM

    (Laboratory of Materials (LABMAT), National Polytechnique School (ENP) of Oran, Oran Mnaouar, Oran 31000, Algeria)

  • BACHIR KHAROUBI

    (�Research Laboratory of Industrial Technology, Faculty of Applied Sciences, University of Tiaret, Tiaret 14000, Algeria)

Abstract

The chemical composition, crystalline structure and optical properties of un-doped ZnO (UZO) and indium (6%)-doped ZnO (IZO) thin films grown on Si substrate were studied using X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and photoluminescence (PL) techniques. The results are complementary and confirm each other. The surface is cleaned using checked ultra-high vacuum (UHV) treatment (argon ion sputtering followed by successive heating). For IZO, the XPS analysis displays that the indium incorporates in the ZnO matrix to form the In-O-Zn-type chemical bonds. The PL of UZO reveals structural defects, including oxygen interstitial (Oi), oxygen vacancies (VO), zinc vacancies (VZn) and interstitial zinc (Zni), and they decrease with the In doping and UHV treatment. For IZO, the PL measurements show the great interest of UHV treatment to stimulate the incorporation of indium into the ZnO matrix. There is an increase in the UV emission intensity and improvement of its physical structure. The In (6%) doping of ZnO is convenient to compensate the zinc vacancies (VZn), eliminate Zni and VO, and ensure the structural homogeneity of IZO film. All the detected peaks of the XRD patterns are matched to the wurtzite crystalline structure for both UZO and IZO thin films grown mainly along the (002) orientation plane.

Suggested Citation

  • Edhawya Hameurlaine & M’Hamed Guezzoul & M’Hammed Bouslama & Abdellah Ouerdane & Amira Derri & Mahmoud Bedrouni & Kadda Benmohktar Bensassi & Abdelhak Baizid & Mahfoud Abdelkrim & Bachir Kharoubi, 2022. "IMPACT OF INDIUM DOPING ON ZnO THIN FILM SUBJECTED TO APPROPRIATE UHV TREATMENT CHARACTERIZED BY XPS, XRD, AND PL TECHNIQUES," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 29(05), pages 1-10, May.
    • Handle: RePEc:wsi:srlxxx:v:29:y:2022:i:05:n:s0218625x22500706
    DOI: 10.1142/S0218625X22500706
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