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Tunable Electron-Spin Polarization By δ-Potential In Layered Semiconductor Nanostructure

Author

Listed:
  • YONG-HONG KONG

    (Hunan University of Science and Engineering, Yongzhou 425100, China)

  • AI-HUA LI

    (Hunan University of Science and Engineering, Yongzhou 425100, China)

  • YAN-JUN GONG

    (Hunan University of Science and Engineering, Yongzhou 425100, China)

  • XI FU

    (Hunan University of Science and Engineering, Yongzhou 425100, China)

Abstract

We theoretically explore how to control electron-spin polarization in layered semiconductor nanostructure (LSN) by a δ-potential realized by atomic-layer doping. Due to Rashba spin-orbit coupling, a considerable spin polarization still remains even through a δ-potential is embedded in the LSN. Spin polarization ratio can be controlled by altering weight or position of δ-potential. Based on such an LSN, a structurally-tunable electron-spin filter may be obtained for spintronics device applications.

Suggested Citation

  • Yong-Hong Kong & Ai-Hua Li & Yan-Jun Gong & Xi Fu, 2022. "Tunable Electron-Spin Polarization By δ-Potential In Layered Semiconductor Nanostructure," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 29(01), pages 1-6, January.
    • Handle: RePEc:wsi:srlxxx:v:29:y:2022:i:01:n:s0218625x22500019
    DOI: 10.1142/S0218625X22500019
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