IDEAS home Printed from https://ideas.repec.org/a/wsi/srlxxx/v28y2021i12ns0218625x21501250.html
   My bibliography  Save this article

A New Approximation: From Barrier Lowering To Interface State Density

Author

Listed:
  • ABDULKADIR KORKUT

    (Department of Physics, Faculty of Science, Yüzüncü Yıl University, 65080 Van, Turkey)

Abstract

In this study, a set of the interface state density (ISD) formulae was derived from the Schottky effect. In contrast to the conventional approximation, a new approximation for the ISD formulae gives very unusual values in the case of forward bias or reverse bias. The former ISD formula contains the oxide thickness in the metal–semiconductor interface region, whereas the new approximation formulae do not contain the oxide thickness. They depend on the applied voltage and built-in potential in the case of both bias. Besides, lowering barrier height is called the Schottky effect. A couple of the new ISD formulae can be proportioned to each other. The ratio is a new coefficient. Moreover, the coefficient is inversely proportional with the a cceptor concentration and third power of zero-voltage depletion length. Moreover, that fraction is inversely proportional to the acceptor concentration and cubic power to depletion length.

Suggested Citation

  • Abdulkadir Korkut, 2021. "A New Approximation: From Barrier Lowering To Interface State Density," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 28(12), pages 1-14, December.
    • Handle: RePEc:wsi:srlxxx:v:28:y:2021:i:12:n:s0218625x21501250
    DOI: 10.1142/S0218625X21501250
    as

    Download full text from publisher

    File URL: http://www.worldscientific.com/doi/abs/10.1142/S0218625X21501250
    Download Restriction: Access to full text is restricted to subscribers
    File URL: https://libkey.io/10.1142/S0218625X21501250?utm_source=ideas
    LibKey link: if access is restricted and if your library uses this service, LibKey will redirect you to where you can use your library subscription to access this item
    ---><---

    As the access to this document is restricted, you may want to search for a different version of it.

    Corrections

    All material on this site has been provided by the respective publishers and authors. You can help correct errors and omissions. When requesting a correction, please mention this item's handle: RePEc:wsi:srlxxx:v:28:y:2021:i:12:n:s0218625x21501250. See general information about how to correct material in RePEc.

    If you have authored this item and are not yet registered with RePEc, we encourage you to do it here. This allows to link your profile to this item. It also allows you to accept potential citations to this item that we are uncertain about.

    We have no bibliographic references for this item. You can help adding them by using this form .

    If you know of missing items citing this one, you can help us creating those links by adding the relevant references in the same way as above, for each refering item. If you are a registered author of this item, you may also want to check the "citations" tab in your RePEc Author Service profile, as there may be some citations waiting for confirmation.

    For technical questions regarding this item, or to correct its authors, title, abstract, bibliographic or download information, contact: Tai Tone Lim (email available below). General contact details of provider: http://www.worldscinet.com/srl/srl.shtml .

    Please note that corrections may take a couple of weeks to filter through the various RePEc services.

    IDEAS is a RePEc service. RePEc uses bibliographic data supplied by the respective publishers.