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IMPROVEMENT IN STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES OF ITO FILM THROUGH AlN AND HfO2 BUFFER LAYERS

Author

Listed:
  • NASER M. AHMED

    (School of Physics, Universiti Sains Malaysia, USM Penang, 11800 Penang, Malaysia)

  • NOOR HUMAM SULAIMAN

    (��Department of Mechanical and Manufacturing Engineering, Universiti Kebangsaan Malaysia, Bangi 43600, Selangor, Malaysia)

  • MAHIR FARIS ABDULLAH

    (��Department of Refrigeration and Air Conditioning Engineering, Al-Rafidian University College, Baghdad 10001, Iraq)

  • ASMAA SOHEIL NAJM

    (�Department of Electrical and Electronic Engineering, Universiti Kebangsaan Malaysia, Bangi 43600, Selangor, Malaysia)

  • NAVEED AFZAL

    (�Centre for Advanced Studies in Physics, GC University, Lahore, Pakistan)

  • ABEER S. ALTOWYAN

    (��Department of Physics, College of Science, Princess Nourah Bint Abdulrahman University, Riyadh, Saudi Arabia)

  • MOHSIN RAFIQUE

    (�Centre for Advanced Studies in Physics, GC University, Lahore, Pakistan)

Abstract

Indium Tin Oxide (ITO) films were deposited on glass substrate using radiofrequency (RF) magnetron sputtering technique. To improve the physical characteristics of the ITO film, AlN and HfO2 buffer layers were deposited on glass prior to the film deposition. The ITO/glass, ITO/AlN/glass and ITO/HfO2/glass films were annealed using CO2 laser and electrical oven heating methods. The crystallinity of the ITO film was improved due to the incorporation of AlN and HfO2 buffer layers and also by the post-deposition annealing process. The optical transmittance of the ITO was also increased due to the presence of the buffer layers. Similarly, the annealed ITO films grown on buffer layers exhibited lower values of the sheet resistance as compared to the film deposited without buffer layers. The laser annealing technique was more found to be more effective in reducing the ITO sheet resistance.

Suggested Citation

  • Naser M. Ahmed & Noor Humam Sulaiman & Mahir Faris Abdullah & Asmaa Soheil Najm & Naveed Afzal & Abeer S. Altowyan & Mohsin Rafique, 2021. "IMPROVEMENT IN STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES OF ITO FILM THROUGH AlN AND HfO2 BUFFER LAYERS," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 28(10), pages 1-9, October.
    • Handle: RePEc:wsi:srlxxx:v:28:y:2021:i:10:n:s0218625x21500943
    DOI: 10.1142/S0218625X21500943
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