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Improvement Of Surface Potential Energy Of Indium Tin Oxide Thin Film Modified With Organic Semiconductor Material Based On Phenyl Group

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  • ALI KEMAL HAVARE

    (Photoelectronics Laboratory (PEL), Toros University, Mersin 33140, Turkey2Microphysics Laboratory, Department of Physics, University of Illinois at Chicago, USA)

Abstract

This study focuses on surface characterization of modified indium tin oxide (ITO) for potential applications as anode in organic electronics devices. [4-iodophenyl]-silanetriol molecules were coated by self-assembled monolayers method on ITO surface. Kelvin Probe Microscopy, Scanning Tunneling Microcopy and X-ray Photoelectron Spectroscopy techniques were used to analyze the modified ITO surface. The results show that organic semiconductor material based on Phenyl group enhance surface morphology and increase the surface potential energy of ITO around ∼100meV and contribute the tunneling current that inject from Fermi energy level of the ITO. This study includes the influence of surface interactions on electrochemical and spectral features of compounds. The results are important in developing surface structures in amorphous layers, better understanding the mechanism of creation of such structures on ITO surface.

Suggested Citation

  • Ali Kemal Havare, 2021. "Improvement Of Surface Potential Energy Of Indium Tin Oxide Thin Film Modified With Organic Semiconductor Material Based On Phenyl Group," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 28(06), pages 1-9, June.
    • Handle: RePEc:wsi:srlxxx:v:28:y:2021:i:06:n:s0218625x21500438
    DOI: 10.1142/S0218625X21500438
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