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HAFNIUM AND NITROGEN INTERACTION AT Hf/GaN(0001) INTERFACE

Author

Listed:
  • RAFAŁ LEWANDKÓW

    (Institute of Experimental Physics, University of Wroclaw, pl. M. Borna 9, Wroclaw, Poland 50-204)

  • RADOSŁAW WASIELEWSKI

    (Institute of Experimental Physics, University of Wroclaw, pl. M. Borna 9, Wroclaw, Poland 50-204)

  • PIOTR MAZUR

    (Institute of Experimental Physics, University of Wroclaw, pl. M. Borna 9, Wroclaw, Poland 50-204)

Abstract

The growth and stability of hafnium films on n-GaN(0001) surface with native oxide was investigated with X-ray and ultraviolet photoelectron spectroscopy (XPS, UPS). It is shown that hafnium creates a continuous and stable layer on GaN substrate. Thermal treatment at 850∘C of Hf/GaN system causes decomposition of GaN and reaction of hafnium with atomic nitrogen from the substrate. XPS spectra demonstrate the reaction by a strong shift of the N 1s and Hf 4f lines. An attempt for bringing on the same reaction with molecular nitrogen under pressure of 1.2×10−6 mbar was not successful. UPS spectra show a metallic character of the hafnium adlayer in such instances.

Suggested Citation

  • Rafał Lewandków & Radosław Wasielewski & Piotr Mazur, 2020. "HAFNIUM AND NITROGEN INTERACTION AT Hf/GaN(0001) INTERFACE," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 27(11), pages 1-4, November.
    • Handle: RePEc:wsi:srlxxx:v:27:y:2020:i:11:n:s0218625x20500134
    DOI: 10.1142/S0218625X20500134
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