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Theoretical Research Of Secondary Electron Emission From Negative Electron Affinity Semiconductors

Author

Listed:
  • AI-GEN XIE

    (School of Physics and Optoelectronic Engineering, Nanjing University of Information Science and Technology, Nanjing 210044, P. R. China)

  • YANG YU

    (School of Physics and Optoelectronic Engineering, Nanjing University of Information Science and Technology, Nanjing 210044, P. R. China)

  • YA-YI CHEN

    (School of Physics and Optoelectronic Engineering, Nanjing University of Information Science and Technology, Nanjing 210044, P. R. China)

  • YU-QING XIA

    (School of Physics and Optoelectronic Engineering, Nanjing University of Information Science and Technology, Nanjing 210044, P. R. China)

  • HAO-YU LIU

    (School of Physics and Optoelectronic Engineering, Nanjing University of Information Science and Technology, Nanjing 210044, P. R. China)

Abstract

Based on primary range R, relationships among parameters of secondary electron yield δ and the processes and characteristics of secondary electron emission (SEE) from negative electron affinity (NEA) semiconductors, the universal formulas for δ at 0.1keV≤Ep≤10keV and at 10keV≤Ep≤100keV for NEA semiconductors were deduced, respectively; where Ep is incident energy of primary electron. According to the characteristics of SEE from NEA semiconductors with 2keV≤Epmax≤5keV, R, deduced universal formulas for δ at 0.1keV≤Ep≤10keV and at 10keV≤Ep≤100keV for NEA semiconductors and experimental data, special formulas for δ at 0.5Epmax≤Ep≤10Epmax of several NEA semiconductors with 2keV≤Epmax≤5keV were deduced and proved to be true experimentally, respectively; where Epmax is the Ep at which δ reaches maximum secondary electron yield. It can be concluded that the formula for B of NEA semiconductors with 2keV≤Epmax≤5keV was deduced and could be used to calculate B, and that the method of calculating the 1/α of NEA semiconductors with 2keV≤Epmax≤5keV is plausible; where B is the probability that an internal secondary electron escapes into vacuum upon reaching the surface of emitter, and 1/α is mean escape depth of secondary electron.

Suggested Citation

  • Ai-Gen Xie & Yang Yu & Ya-Yi Chen & Yu-Qing Xia & Hao-Yu Liu, 2019. "Theoretical Research Of Secondary Electron Emission From Negative Electron Affinity Semiconductors," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 26(04), pages 1-12, May.
    • Handle: RePEc:wsi:srlxxx:v:26:y:2019:i:04:n:s0218625x18501810
    DOI: 10.1142/S0218625X18501810
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