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The Effects Of Boron Doping On Residual Stress Of Hfcvd Diamond Film For Mems Applications

Author

Listed:
  • TIANQI ZHAO

    (School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240, P. R. China)

  • XINCHANG WANG

    (School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240, P. R. China)

  • FANGHONG SUN

    (School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240, P. R. China)

Abstract

In this study, the residual stress of boron-doped diamond (BDD) films is investigated as a function of boron doping level using X-ray diffraction (XRD) analysis. Boron doping level is controlled from 1000ppm to 9000ppm by dissolving trimethyl borate into acetone. BDD films are deposited on silicon wafers using a bias-enhanced hot filament chemical vapor deposition (BE-HFCVD) system. Residual stress calculated by sin2 ψ method varies linearly from −2.4GPa to −1.1GPa with increasing boron doping level. On the BDD film of −1.75GPa, free standing BDD cantilevers are fabricated by photolithography and ICP-RIE processes, then tested by laser Doppler vibrometer (LDV). A cantilever with resonant frequency of 183KHz and Q factor of 261 in the air is fabricated.

Suggested Citation

  • Tianqi Zhao & Xinchang Wang & Fanghong Sun, 2018. "The Effects Of Boron Doping On Residual Stress Of Hfcvd Diamond Film For Mems Applications," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 25(01), pages 1-8, January.
    • Handle: RePEc:wsi:srlxxx:v:25:y:2018:i:01:n:s0218625x18500397
    DOI: 10.1142/S0218625X18500397
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