IDEAS home Printed from https://ideas.repec.org/a/wsi/srlxxx/v21y2014i02ns0218625x14500292.html
   My bibliography  Save this article

INVESTIGATION OF LEAKAGE CURRENT BEHAVIOR OFPt/Bi0.975La0.025Fe0.975Ni0.025O3/PtCAPACITOR MEASURED AT DIFFERENT TEMPERATURES

Author

Listed:
  • XIU HONG DAI

    (College of Information Engineering, Hebei University of Technology, Tianjin 300401, P. R. China)

  • HONG DONG ZHAO

    (College of Information Engineering, Hebei University of Technology, Tianjin 300401, P. R. China)

  • LEI ZHANG

    (College of Physics Science & Technology, Hebei University, Baoding 071002, P. R. China)

  • HUI JUAN ZHU

    (College of Physics Science & Technology, Hebei University, Baoding 071002, P. R. China)

  • XIAO HONG LI

    (College of Physics Science & Technology, Hebei University, Baoding 071002, P. R. China)

  • YA JUN ZHAO

    (College of Physics Science & Technology, Hebei University, Baoding 071002, P. R. China)

  • JIAN XIN GUO

    (College of Physics Science & Technology, Hebei University, Baoding 071002, P. R. China)

  • QING XUN ZHAO

    (College of Physics Science & Technology, Hebei University, Baoding 071002, P. R. China)

  • YING LONG WANG

    (College of Physics Science & Technology, Hebei University, Baoding 071002, P. R. China)

  • BAO TING LIU

    (College of Physics Science & Technology, Hebei University, Baoding 071002, P. R. China)

  • LIAN XI MA

    (Department of Physics, Blinn College, TX 77805, Bryan, USA)

Abstract

PolycrystallineBi0.975La0.025Fe0.975Ni0.025O3(BLFNO) film is fabricated onPt/Ti/SiO2/Si(111)substrate by sol–gel method. It is found that the well-crystallized BLFNO film is polycrystalline, and thePt/BLFNO/Ptcapacitor possesses good ferroelectric properties with remnant polarization of 74 μC/cm2at electric field of 833 kV/cm. Moreover, it is also found that the leakage current density of thePt/BLFNO/Ptcapacitor increases with the increase of measurement temperature ranging from 100 to 300 K. The leakage density of thePt/BLFNO/Ptcapacitor satisfies space-charge-limited conduction (SCLC) at higher electric field and shows little dependence on voltage polarity and temperature, but shows polarity and temperature dependence at lower applied electric field. With temperature increasing from 100 to 300 K at lower applied electric field, the most likely conduction mechanism is from Ohmic behavior to SCLC for positive biases, but no clear dominant mechanism for negative biases is shown.

Suggested Citation

  • Xiu Hong Dai & Hong Dong Zhao & Lei Zhang & Hui Juan Zhu & Xiao Hong Li & Ya Jun Zhao & Jian Xin Guo & Qing Xun Zhao & Ying Long Wang & Bao Ting Liu & Lian Xi Ma, 2014. "INVESTIGATION OF LEAKAGE CURRENT BEHAVIOR OFPt/Bi0.975La0.025Fe0.975Ni0.025O3/PtCAPACITOR MEASURED AT DIFFERENT TEMPERATURES," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 21(02), pages 1-7.
  • Handle: RePEc:wsi:srlxxx:v:21:y:2014:i:02:n:s0218625x14500292
    DOI: 10.1142/S0218625X14500292
    as

    Download full text from publisher

    File URL: http://www.worldscientific.com/doi/abs/10.1142/S0218625X14500292
    Download Restriction: Access to full text is restricted to subscribers

    File URL: https://libkey.io/10.1142/S0218625X14500292?utm_source=ideas
    LibKey link: if access is restricted and if your library uses this service, LibKey will redirect you to where you can use your library subscription to access this item
    ---><---

    As the access to this document is restricted, you may want to search for a different version of it.

    More about this item

    Keywords

    BiFeO3; doping; temperature; leakage current;
    All these keywords.

    JEL classification:

    Statistics

    Access and download statistics

    Corrections

    All material on this site has been provided by the respective publishers and authors. You can help correct errors and omissions. When requesting a correction, please mention this item's handle: RePEc:wsi:srlxxx:v:21:y:2014:i:02:n:s0218625x14500292. See general information about how to correct material in RePEc.

    If you have authored this item and are not yet registered with RePEc, we encourage you to do it here. This allows to link your profile to this item. It also allows you to accept potential citations to this item that we are uncertain about.

    We have no bibliographic references for this item. You can help adding them by using this form .

    If you know of missing items citing this one, you can help us creating those links by adding the relevant references in the same way as above, for each refering item. If you are a registered author of this item, you may also want to check the "citations" tab in your RePEc Author Service profile, as there may be some citations waiting for confirmation.

    For technical questions regarding this item, or to correct its authors, title, abstract, bibliographic or download information, contact: Tai Tone Lim (email available below). General contact details of provider: http://www.worldscinet.com/srl/srl.shtml .

    Please note that corrections may take a couple of weeks to filter through the various RePEc services.

    IDEAS is a RePEc service. RePEc uses bibliographic data supplied by the respective publishers.