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The Effect Of Dopant Dose Loss During Annealing On Heavily Doped Surface Layers Obtained By Recoil Implantation Of Antimony In Silicon

Author

Listed:
  • M. N. MESLI

    (Laboratoire de Microscope Electronique et Sciences des Matériaux, Département de Physique, USTO. BP1505 El m'naouar, Oran 31000, Algérie)

  • B. BENBAHI

    (Laboratoire de Microscope Electronique et Sciences des Matériaux, Département de Physique, USTO. BP1505 El m'naouar, Oran 31000, Algérie)

  • H. BOUAFIA

    (Laboratoire de Microscope Electronique et Sciences des Matériaux, Département de Physique, USTO. BP1505 El m'naouar, Oran 31000, Algérie)

  • M. BELMEKKI

    (Université des Sciences et de la Technologie Mohamed Boudiaf, BP 1505 El M'naouar 31000 Oran, Algérie)

  • B. ABIDRI

    (Laboratoire des Matériaux Magnétiques, Université Djillali Liabès, Sidi Bel-Abbes 22000, Algérie)

  • S. HIADSI

    (Laboratoire de Microscope Electronique et Sciences des Matériaux, Département de Physique, USTO. BP1505 El m'naouar, Oran 31000, Algérie)

Abstract

The aim of our investigation is focused on studying the effect of dopant dose loss during annealing treatments on heavily doped surface layers, obtained by recoil implantation of antimony in silicon. We are interested particularly by the increase of sheet resistance consequently to the shallow junctions obtained at the surface of substrate and the contribution of the dopant dose loss phenomenon following the high concentration of impurities at the surface. In this work, we report some quantitative data concerning the dopant loss at the surface of silicon implanted and its dependence with annealing treatments. Electrical measurements associated with Rutherford backscattering (RBS) technical analysis showed interesting values of sheet resistance compared with classical ion implantation and despite dopant dose loss phenomenon.

Suggested Citation

  • M. N. Mesli & B. Benbahi & H. Bouafia & M. Belmekki & B. Abidri & S. Hiadsi, 2013. "The Effect Of Dopant Dose Loss During Annealing On Heavily Doped Surface Layers Obtained By Recoil Implantation Of Antimony In Silicon," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 20(03n04), pages 1-6.
    • Handle: RePEc:wsi:srlxxx:v:20:y:2013:i:03n04:n:s0218625x13500388
    DOI: 10.1142/S0218625X13500388
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