IDEAS home Printed from https://ideas.repec.org/a/wsi/srlxxx/v18y2011i05ns0218625x11014631.html
   My bibliography  Save this article

BUFFER LAYER EFFECTS ON MAGNETOELECTRIC COUPLING OFNi/Pb(Zr0.52Ti0.48)O3BILAYERS

Author

Listed:
  • K. BI

    (College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, P. R. China)

  • Z. L. HE

    (College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, P. R. China)

  • Y. G. WANG

    (College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, P. R. China)

Abstract

Magnetoelectric (ME)Ni/Pb(Zr0.52Ti0.48)O3bilayers have been successfully prepared by hydrothermal method usingTias buffer layer. The hydrothermal mechanism of PZT thin film deposited ontoNilayer has been discussed. The structure and ferroelectric properties of the deposited PZT thin films are characterized by X-ray diffraction and ferroelectric testing. The ME voltage coefficient of theNi/PZT bilayers gradually decreases as the thickness of buffer layer increases because the interface coupling of theNi/PZT layers gradually decreases. The large ME coefficient makes theseNi/PZT bilayers possible for applications in multifunctional devices such as electromagnetic sensor, transducers and microwave devices.

Suggested Citation

  • K. Bi & Z. L. He & Y. G. Wang, 2011. "BUFFER LAYER EFFECTS ON MAGNETOELECTRIC COUPLING OFNi/Pb(Zr0.52Ti0.48)O3BILAYERS," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 18(05), pages 177-181.
    • Handle: RePEc:wsi:srlxxx:v:18:y:2011:i:05:n:s0218625x11014631
    DOI: 10.1142/S0218625X11014631
    as

    Download full text from publisher

    File URL: http://www.worldscientific.com/doi/abs/10.1142/S0218625X11014631
    Download Restriction: Access to full text is restricted to subscribers
    File URL: https://libkey.io/10.1142/S0218625X11014631?utm_source=ideas
    LibKey link: if access is restricted and if your library uses this service, LibKey will redirect you to where you can use your library subscription to access this item
    ---><---

    As the access to this document is restricted, you may want to search for a different version of it.

    Corrections

    All material on this site has been provided by the respective publishers and authors. You can help correct errors and omissions. When requesting a correction, please mention this item's handle: RePEc:wsi:srlxxx:v:18:y:2011:i:05:n:s0218625x11014631. See general information about how to correct material in RePEc.

    If you have authored this item and are not yet registered with RePEc, we encourage you to do it here. This allows to link your profile to this item. It also allows you to accept potential citations to this item that we are uncertain about.

    We have no bibliographic references for this item. You can help adding them by using this form .

    If you know of missing items citing this one, you can help us creating those links by adding the relevant references in the same way as above, for each refering item. If you are a registered author of this item, you may also want to check the "citations" tab in your RePEc Author Service profile, as there may be some citations waiting for confirmation.

    For technical questions regarding this item, or to correct its authors, title, abstract, bibliographic or download information, contact: Tai Tone Lim (email available below). General contact details of provider: http://www.worldscinet.com/srl/srl.shtml .

    Please note that corrections may take a couple of weeks to filter through the various RePEc services.

    IDEAS is a RePEc service. RePEc uses bibliographic data supplied by the respective publishers.