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OPTICAL PROPERTIES OFAsSeTlTHIN FILMS DEPOSITED BYe-BEAM EVAPORATION TECHNIQUE

Author

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  • M. M. ABD EL-RAHEEM

    (Department of Physics, Faculty of Science, Taif University, Taif 888, Saudi Arabia)

Abstract

Five compositions of the systemAs25Se75-xTlx(x = 12, 16, 20, 24 and 28%) have been prepared using melt quench technique. Thin films of the same thickness (200 nm) were deposited by electron beam evaporation technique. Optical and other parameters of the films have been studied. The optical band gapEopfound to decrease by increasing the coordination numberrand average number of bonds per atomNavand by decreasing the heat of atomizationHs. Other parameters as an oscillator energyEo, dispersion energyEdand plasma frequencyωpfound to be affected by changing thallium content.

Suggested Citation

  • M. M. Abd El-Raheem, 2011. "OPTICAL PROPERTIES OFAsSeTlTHIN FILMS DEPOSITED BYe-BEAM EVAPORATION TECHNIQUE," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 18(01n02), pages 71-75.
    • Handle: RePEc:wsi:srlxxx:v:18:y:2011:i:01n02:n:s0218625x11014394
    DOI: 10.1142/S0218625X11014394
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