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Hydrogenated Amorphous/Nanocrystalline Silicon Thin Films On Porous Anodic Alumina Substrate

Author

Listed:
  • SANG-OK KIM

    (Battery Research Center, Korea Institute of Science and Technology, 39-1 Hawolgok-dong, Seongbuk-gu, Seoul 136-791, Republic of Korea)

  • ALIAKSANDR KHODIN

    (Battery Research Center, Korea Institute of Science and Technology, 39-1 Hawolgok-dong, Seongbuk-gu, Seoul 136-791, Republic of Korea)

  • JOONG KEE LEE

    (Battery Research Center, Korea Institute of Science and Technology, 39-1 Hawolgok-dong, Seongbuk-gu, Seoul 136-791, Republic of Korea)

Abstract

Hydrogenated amorphous and nanocrystalline silicon thin films were grown on porous anodic alumina substrates using electron cyclotron resonance-chemical vapor deposition technique from argon, hydrogen and silane gas composition. The structural characterization of the deposited hydrogenated silicon films were performed by scanning electron microscopy, Raman spectroscopy, and X-ray diffraction studies. The results revealed that mixed amorphous/nanocrystalline silicon phases with specific novel morphology were obtained on textured surfaces. The evolution of the film on ripple-like surface exhibited amorphous dominant structure, however, the film deposited on tipped/ribbed surface consisted of amorphous and nanocrystalline phases composite. The growth process strongly depends on the textured substrate pattern, which influences on the nanostructure shapes and crystallinity.

Suggested Citation

  • Sang-Ok Kim & Aliaksandr Khodin & Joong Kee Lee, 2010. "Hydrogenated Amorphous/Nanocrystalline Silicon Thin Films On Porous Anodic Alumina Substrate," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 17(03), pages 283-288.
    • Handle: RePEc:wsi:srlxxx:v:17:y:2010:i:03:n:s0218625x10013679
    DOI: 10.1142/S0218625X10013679
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